Effect of growth interruption on the structural and optical properties of (100) InAs/InAlAs/InP nanostructures

B. H. Koo, C. G. Lee, J. H. Chang, T. Hanada, H. Makino, T. Yao, Y. G. Park, D. Shindo

Research output: Contribution to journalArticle

Abstract

The effect of growth interruption (GI) on the structural and optical properties of InAs nanostructures was investigated by transmission electron microscopy (TEM) and photoluminescence (PL). By introducing the GI, a single PL peak changed to a distinctive multiple-peak feature with average full width at half maximum ≈30 meV, which shows the state filling of the several low energy peaks. In conjunction with the TEM results, the changes in the PL spectra due to GI are most probably correlated with the formation of different-height islands isolated from neighbor islands due to a 2D-3D transition of the InAs layer during the GI.

Original languageEnglish
Pages (from-to)S681-S684
JournalJournal of the Korean Physical Society
Volume45
Issue numberSUPPL.
Publication statusPublished - 2004 Dec 1

Keywords

  • InAs quantum dots
  • MBE
  • PL
  • TEM

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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  • Cite this

    Koo, B. H., Lee, C. G., Chang, J. H., Hanada, T., Makino, H., Yao, T., Park, Y. G., & Shindo, D. (2004). Effect of growth interruption on the structural and optical properties of (100) InAs/InAlAs/InP nanostructures. Journal of the Korean Physical Society, 45(SUPPL.), S681-S684.