Effect of grain boundary on electrical characteristics in B- and P-doped polycrystalline Si1-x -yGexCy film deposited by ultraclean LPCVD

Hyunyoung Shim, Masao Sakuraba, Junichi Murota

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

The effect of grain boundary on electrical characteristics in B- and P-doped polycrystalline (poly) Si1-x -yGexCy films was investigated. Poly-Si1-x -yGexCy films were deposited on thermally oxidized Si(100) at 500-650 °C in a SiH4-GeH4-SiH3CH3-H2 gas mixture by an ultraclean hot-wall low-pressure chemical vapor deposition. B and P were doped into the films by ion implantation and diffusion by heat-treatment. The electrical properties are characterized by grain size, width of disordered region near grain boundaries, carrier trap density and the amount of impurity segregation at grain boundaries. In the B-doped poly-Si1-x -yGexCy films heat-treated at 900 °C, the increase of carrier concentration npoly and the decrease of resistivity ρpoly with Ge addition are caused by the narrowing of the width of disordered regions, i.e., crystallization of disordered regions induced by Ge atoms. The decrease of npoly and the increase of ρpoly with C addition are explained by the suppression of crystallization of disordered region due to C atom segregation at grain boundaries. In the P-doped poly-Si1-x -yGexCy films, it is found that npoly and ρpoly are influenced by P atom segregation at grain boundaries due to lowering solid solubility of P in grain by the existence of Ge.

Original languageEnglish
Pages (from-to)36-39
Number of pages4
JournalThin Solid Films
Volume508
Issue number1-2
DOIs
Publication statusPublished - 2006 Jun 5

Keywords

  • Carrier concentration
  • Chemical vapor deposition
  • Electrical characteristics
  • Grain boundary
  • Polycrystalline SiGeC

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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