Effect of grain boundary character on selective growth of goss grain in Fe-3%Si alloy

Y. Ushigami, S. Nakamura, S. Takebayashi, S. Suzuki

Research output: Contribution to journalConference article

13 Citations (Scopus)

Abstract

Effect of grain boundary character on the selective growth of Goss grain during secondary recrystallization has been investigated. Grain growth behavior of secondary recrystallized Goss grain was observed in situ by synchrotron x-ray topography and orientation relationship between the Goss grain and the preferentially consumed grains in the primary matrix was analyzed by EBSP technique. Grain growth of Goss grain is classified into two regions; (1) inhomogeneous and sluggish grain growth in the lower transition temperature region and (2) uniform and stationary grain growth in the higher temperature region. Goss grain grows preferentially into the matrix grains with near-Σ9 boundaries (within the twice of misorientation angle due to the Brandon's criterion) in the lower transition temperature region, where most of the general boundaries are stagnated, which leads to inhomogeneous and sluggish grain growth. As annealing temperature rises, the inhibitor intensity decreases and pinning of general boundaries gradually fade out, which leads to uniform and stationary grain growth. Goss grain is frequently bounded by near-Σ9 boundaries and thus grows selectively in the lower transition temperature region.

Original languageEnglish
Pages (from-to)973-978
Number of pages6
JournalMaterials Science Forum
Volume408-412
Issue numberI
DOIs
Publication statusPublished - 2002 Jan 1
EventProceedings of the 13th International Conference on Textures of Materials - Seoul, Korea, Republic of
Duration: 2002 Aug 262002 Aug 30

Keywords

  • CSL
  • EBSP
  • Secondary Recrystallization
  • Silicon Steel
  • Texture
  • X-Ray Topography

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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