Effect of grain boundary character of multicrystalline Si on external and internal (phosphorus) gettering of impurities

Supawan Joonwichien, Isao Takahashi, Kentaro Kutsukake, Noritaka Usami

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

We investigated the effect of the grain boundary (GB) character of multicrystalline Si (mc-Si) on the efficiency of external and internal gettering of impurities during phosphorus diffusion gettering (PDG). We utilized seed crystals with an artificially designed GB configuration to grow mc-Si ingots with different artificial GB characters. PDG combined with an originally developed multiple-cycle gettering technique at low temperature was introduced on intentionally Fe-contaminated mc-Si samples to enhance external and internal gettering. A significant positive PDG effect was observed after PDG combined with the multiple-cycle technique, as evidenced by the increase in lifetimes after PDG. A bright cloud-like photoluminescence signal around contaminated GBs was observed for artificial Σ5-GBs and tilt-GBs after PDG, suggesting the enhancement of the internal gettering efficiency by leaving a cleaner area around the GBs. This result suggests the importance of the control of crystal defect character as well as impurities in mc-Si ingots, which could strongly affect the PDG efficiency.

Original languageEnglish
Pages (from-to)1615-1625
Number of pages11
JournalProgress in Photovoltaics: Research and Applications
Volume24
Issue number12
DOIs
Publication statusPublished - 2016 Dec 1

Keywords

  • artificial grain boundary
  • internal gettering
  • multicrystalline Si
  • phosphorus diffusion gettering

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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