Effect of Ge/Si heterostructures on carrier extraction in Si solar cells with Ge quantum dots

Takeshi Tayagaki; Yusuke Hoshi; Kazufumi Ooi; Takanori Kiguchi; Noritaka Usami

doi:10.1109/PVSC.2013.6744160

Effect of Ge/Si heterostructures on carrier extraction in Si solar cells with Ge quantum dots

Takeshi Tayagaki, Yusuke Hoshi, Kazufumi Ooi, Takanori Kiguchi, Noritaka Usami

Materials Processing and Characterization Division

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Solar cells using quantum dots (QDs) have been extensively studied, in many of which the open circuit voltage (V_oc) always decreases. The mechanism of this V_oc reduction has not been understood well. We studied Si solar cells with multi-stacked Ge QDs (Ge/Si QD solar cells), in which the type-II Ge/Si band offsets are formed. From the current-voltage characteristics, the V_oc is found to increase at low temperatures, indicating that the V_oc reduction is due to thermal excitation of carriers. By comparing solar cells with different Ge thicknesses, we found that the V_oc reduction depends strongly on the Ge thickness.

Original language	English
Title of host publication	39th IEEE Photovoltaic Specialists Conference, PVSC 2013
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	330-332
Number of pages	3
ISBN (Print)	9781479932993
DOIs	https://doi.org/10.1109/PVSC.2013.6744160
Publication status	Published - 2013 Jan 1
Event	39th IEEE Photovoltaic Specialists Conference, PVSC 2013 - Tampa, FL, United States Duration: 2013 Jun 16 → 2013 Jun 21

Publication series

Name	Conference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)	0160-8371

Other

Other	39th IEEE Photovoltaic Specialists Conference, PVSC 2013
Country	United States
City	Tampa, FL
Period	13/6/16 → 13/6/21

Keywords

Germanium
Photovoltaic cells
Quantum dots
Semiconductor nanostructures
Silicon

ASJC Scopus subject areas

Control and Systems Engineering
Industrial and Manufacturing Engineering
Electrical and Electronic Engineering

Access to Document

10.1109/PVSC.2013.6744160

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Cite this

Tayagaki, T., Hoshi, Y., Ooi, K., Kiguchi, T., & Usami, N. (2013). Effect of Ge/Si heterostructures on carrier extraction in Si solar cells with Ge quantum dots. In 39th IEEE Photovoltaic Specialists Conference, PVSC 2013 (pp. 330-332). [6744160] (Conference Record of the IEEE Photovoltaic Specialists Conference). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2013.6744160

Effect of Ge/Si heterostructures on carrier extraction in Si solar cells with Ge quantum dots. / Tayagaki, Takeshi; Hoshi, Yusuke; Ooi, Kazufumi; Kiguchi, Takanori; Usami, Noritaka.

39th IEEE Photovoltaic Specialists Conference, PVSC 2013. Institute of Electrical and Electronics Engineers Inc., 2013. p. 330-332 6744160 (Conference Record of the IEEE Photovoltaic Specialists Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Tayagaki, T, Hoshi, Y, Ooi, K, Kiguchi, T & Usami, N 2013, Effect of Ge/Si heterostructures on carrier extraction in Si solar cells with Ge quantum dots. in 39th IEEE Photovoltaic Specialists Conference, PVSC 2013., 6744160, Conference Record of the IEEE Photovoltaic Specialists Conference, Institute of Electrical and Electronics Engineers Inc., pp. 330-332, 39th IEEE Photovoltaic Specialists Conference, PVSC 2013, Tampa, FL, United States, 13/6/16. https://doi.org/10.1109/PVSC.2013.6744160

Tayagaki T, Hoshi Y, Ooi K, Kiguchi T, Usami N. Effect of Ge/Si heterostructures on carrier extraction in Si solar cells with Ge quantum dots. In 39th IEEE Photovoltaic Specialists Conference, PVSC 2013. Institute of Electrical and Electronics Engineers Inc. 2013. p. 330-332. 6744160. (Conference Record of the IEEE Photovoltaic Specialists Conference). https://doi.org/10.1109/PVSC.2013.6744160

Tayagaki, Takeshi ; Hoshi, Yusuke ; Ooi, Kazufumi ; Kiguchi, Takanori ; Usami, Noritaka. / Effect of Ge/Si heterostructures on carrier extraction in Si solar cells with Ge quantum dots. 39th IEEE Photovoltaic Specialists Conference, PVSC 2013. Institute of Electrical and Electronics Engineers Inc., 2013. pp. 330-332 (Conference Record of the IEEE Photovoltaic Specialists Conference).

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abstract = "Solar cells using quantum dots (QDs) have been extensively studied, in many of which the open circuit voltage (Voc) always decreases. The mechanism of this Voc reduction has not been understood well. We studied Si solar cells with multi-stacked Ge QDs (Ge/Si QD solar cells), in which the type-II Ge/Si band offsets are formed. From the current-voltage characteristics, the Voc is found to increase at low temperatures, indicating that the Voc reduction is due to thermal excitation of carriers. By comparing solar cells with different Ge thicknesses, we found that the Voc reduction depends strongly on the Ge thickness.",

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