TY - JOUR
T1 - Effect of Ge substitution on magnetic properties in the itinerant chiral magnet MnSi
AU - Aji, Seno
AU - Ishida, Hidesato
AU - Okuyama, Daisuke
AU - Nawa, Kazuhiro
AU - Hong, Tao
AU - Sato, Taku J.
N1 - Funding Information:
The authors thank S. Ohhashi and M. Ozawa for technical assistance in using the electron scanning microscope (SEM; Hitachi SU6600). S.A. acknowledges the support of MEXT scholarship. This work was partly supported by Grants-In-Aid for Scientific Research (Grants No. JP15H05883, No. JP17K18744, No. JP19H01834, No. JP19K21839, and No. JP19H05824) from the Japan Society for the Promotion of Science. A portion of this research used resources at the High Flux Isotope Reactor, a DOE Office of Science User Facility operated by the Oak Ridge National Laboratory, and was partly supported by the U.S.-Japan Collaborative Program on Neutron Scattering. The work at IMRAM was partly supported by by the research program “Dynamic alliance for open innovation bridging human, environment, and materials.”
Publisher Copyright:
©2019 American Physical Society.
PY - 2019/10/14
Y1 - 2019/10/14
N2 - We have investigated the effect of Ge substitution on the magnetic ordering in the B20 itinerant chiral magnet MnSi prepared by melting and annealing under ambient pressure. From a metallurgical survey, the solubility limit of Ge was found to be x=0.144(5) with annealing temperature Tan=1073 K. Magnetization measurements on MnSi1-xGex samples show that the helical ordering temperature Tc increases rapidly in the low-x range, whereas it becomes saturated at higher concentration x>0.1. The Ge substitution also increases both the saturation magnetization Ms and the critical field to the fully polarized state Hc2. In contrast to the saturation behavior of Tc, those parameters increase linearly up to the highest Ge concentration investigated. In the temperature-magnetic field phase diagram, we found enlargement of the skyrmion phase region for large x samples. We, furthermore, observed the nonlinear behavior of helical modulation vector k as a function of Ge concentration, which can be described qualitatively using the mean field approximation.
AB - We have investigated the effect of Ge substitution on the magnetic ordering in the B20 itinerant chiral magnet MnSi prepared by melting and annealing under ambient pressure. From a metallurgical survey, the solubility limit of Ge was found to be x=0.144(5) with annealing temperature Tan=1073 K. Magnetization measurements on MnSi1-xGex samples show that the helical ordering temperature Tc increases rapidly in the low-x range, whereas it becomes saturated at higher concentration x>0.1. The Ge substitution also increases both the saturation magnetization Ms and the critical field to the fully polarized state Hc2. In contrast to the saturation behavior of Tc, those parameters increase linearly up to the highest Ge concentration investigated. In the temperature-magnetic field phase diagram, we found enlargement of the skyrmion phase region for large x samples. We, furthermore, observed the nonlinear behavior of helical modulation vector k as a function of Ge concentration, which can be described qualitatively using the mean field approximation.
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U2 - 10.1103/PhysRevMaterials.3.104408
DO - 10.1103/PhysRevMaterials.3.104408
M3 - Article
AN - SCOPUS:85074433024
VL - 3
JO - Physical Review Materials
JF - Physical Review Materials
SN - 2475-9953
IS - 10
M1 - 104408
ER -