Effect of Ge addition on postannealed CoCrGePt thin film media

H. Domon, D. D. Djayaprawira, Migaku Takahashi, T. Endo, S. Furukawa

    Research output: Contribution to journalArticle

    2 Citations (Scopus)

    Abstract

    The effect of Ge addition to postannealed CoCrGe and CoCrGePt thin film media with CrMn overlayer is discussed. It is found that the postannealing at about 410°C drastically reduces intergranular exchange interaction and increases coercivity of the media, which is probably due to the diffusion of nonmagnetic elements to the grain boundary in the magnetic layer. It is clarified that Ge addition increases the anisotropy field of postannealed CoCrGe or CoCrGePt media, which agrees well with the previous results obtained in CoCrGe bulk polycrystalline alloy. In particular, the anisotropy field of postannealed CoCr 5 media is increased by 70% with 10 at.% Ge addition. The increase of coercivity is mainly due to the increase of anisotropy field. It is confirmed that Ge addition to CoCr-based media can increase H c and H k grain significantly, in case where the grains of the magnetic layer can be magnetically isolated.

    Original languageEnglish
    Pages (from-to)8632-8634
    Number of pages3
    JournalJournal of Applied Physics
    Volume91
    Issue number10 I
    DOIs
    Publication statusPublished - 2002 May 15

    ASJC Scopus subject areas

    • Physics and Astronomy(all)

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  • Cite this

    Domon, H., Djayaprawira, D. D., Takahashi, M., Endo, T., & Furukawa, S. (2002). Effect of Ge addition on postannealed CoCrGePt thin film media. Journal of Applied Physics, 91(10 I), 8632-8634. https://doi.org/10.1063/1.1453350