Effect of Ge addition on postannealed CoCrGePt thin film media

H. Domon, D. D. Djayaprawira, M. Takahashi, T. Endo, S. Furukawa

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

The effect of Ge addition to postannealed CoCrGe and CoCrGePt thin film media with CrMn overlayer is discussed. It is found that the postannealing at about 410°C drastically reduces intergranular exchange interaction and increases coercivity of the media, which is probably due to the diffusion of nonmagnetic elements to the grain boundary in the magnetic layer. It is clarified that Ge addition increases the anisotropy field of postannealed CoCrGe or CoCrGePt media, which agrees well with the previous results obtained in CoCrGe bulk polycrystalline alloy. In particular, the anisotropy field of postannealed CoCr 5 media is increased by 70% with 10 at.% Ge addition. The increase of coercivity is mainly due to the increase of anisotropy field. It is confirmed that Ge addition to CoCr-based media can increase H c and H k grain significantly, in case where the grains of the magnetic layer can be magnetically isolated.

Original languageEnglish
Pages (from-to)8632-8634
Number of pages3
JournalJournal of Applied Physics
Volume91
Issue number10 I
DOIs
Publication statusPublished - 2002 May 15
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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