Effect of GaP and GaP/InGaP insertion layers on the structural and optical properties of InP quantum dots grown by metal-organic vapor phase epitaxy

S. S. Han, A. Higo, W. Yunpeng, M. Deura, M. Sugiyama, Y. Nakano, S. Panyakeow, S. Ratanathammaphan

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

A comparison of ultra-thin insertion layers (GaP and GaP/In 0.4Ga0.6P) on InP self-assembled quantum dots (SAQDs) grown on GaAs (0 0 1) substrates using metal-organic vapor phase epitaxy (MOVPE) was studied. Atomic force microscopy (AFM) and photoluminescence (PL) were employed to characterize the optical and structural properties of the grown InP QDs. It is found that the QD dimension, size distribution and density strongly depend on the insertion layer thickness which led to tune the emission wavelength and narrowing of full width at half maximum (FWHM) at low temperature (20-250 K) and at room-temperature PL measurements. This result is attributed to the improved QD size and quantum confinement effect arising from the insertion of the GaP and GaP/In0.4Ga0.6P layers.

Original languageEnglish
Pages (from-to)143-148
Number of pages6
JournalMicroelectronic Engineering
Volume112
DOIs
Publication statusPublished - 2013 Feb 27

Keywords

  • Atomic force microscopy (AFM)
  • GaP
  • InGaP
  • InP
  • Metal-organic vapor phase epitaxy (MOVPE)
  • Photoluminescence (PL)
  • Self-assembled quantum dots (SAQDs)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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