Effect of gaas intermediary layer thickness on the properties of (Ga,Mn) as tri-layer structures

Y. Sato; D. Chiba; F. Matsukura; H. Ohno

doi:10.1007/sl0948-005-0008-z

Effect of gaas intermediary layer thickness on the properties of (Ga,Mn) as tri-layer structures

Y. Sato, D. Chiba, F. Matsukura, H. Ohno

Research output: Contribution to journal › Article

5 Citations (Scopus)

Abstract

We have investigated the magnetic properties, current-voltage characteristics, and tunnel magnetoresistance of (Ga,Mn)As/GaAs/(Ga,Mn)As tri-layers having different thickness of the intermediary GaAs layer (1-7 nm). When the thickness of GaAs layer is less than 6 nm, the two (Ga,Mn)As layers couples ferromagnetically. For the tri-layers with thicker GaAs, the GaAs acts as an effective barrier for the carrier transport and decouples the two (Ga,Mn)As layers, which results in tunnel magnetoresistance ratio as high as 100% at 5 K.

Original language	English
Pages (from-to)	345-347
Number of pages	3
Journal	Journal of Superconductivity and Novel Magnetism
Volume	18
Issue number	3
DOIs	https://doi.org/10.1007/sl0948-005-0008-z
Publication status	Published - 2005 Dec 1

Keywords

(Ga,Mn)
As
Diluted magnetic semiconductors
III-V semiconductors
TMR

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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Sato, Y., Chiba, D., Matsukura, F., & Ohno, H. (2005). Effect of gaas intermediary layer thickness on the properties of (Ga,Mn) as tri-layer structures. Journal of Superconductivity and Novel Magnetism, 18(3), 345-347. https://doi.org/10.1007/sl0948-005-0008-z

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abstract = "We have investigated the magnetic properties, current-voltage characteristics, and tunnel magnetoresistance of (Ga,Mn)As/GaAs/(Ga,Mn)As tri-layers having different thickness of the intermediary GaAs layer (1-7 nm). When the thickness of GaAs layer is less than 6 nm, the two (Ga,Mn)As layers couples ferromagnetically. For the tri-layers with thicker GaAs, the GaAs acts as an effective barrier for the carrier transport and decouples the two (Ga,Mn)As layers, which results in tunnel magnetoresistance ratio as high as 100% at 5 K.",

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AU - Sato, Y.

AU - Chiba, D.

AU - Matsukura, F.

AU - Ohno, H.

PY - 2005/12/1

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N2 - We have investigated the magnetic properties, current-voltage characteristics, and tunnel magnetoresistance of (Ga,Mn)As/GaAs/(Ga,Mn)As tri-layers having different thickness of the intermediary GaAs layer (1-7 nm). When the thickness of GaAs layer is less than 6 nm, the two (Ga,Mn)As layers couples ferromagnetically. For the tri-layers with thicker GaAs, the GaAs acts as an effective barrier for the carrier transport and decouples the two (Ga,Mn)As layers, which results in tunnel magnetoresistance ratio as high as 100% at 5 K.

AB - We have investigated the magnetic properties, current-voltage characteristics, and tunnel magnetoresistance of (Ga,Mn)As/GaAs/(Ga,Mn)As tri-layers having different thickness of the intermediary GaAs layer (1-7 nm). When the thickness of GaAs layer is less than 6 nm, the two (Ga,Mn)As layers couples ferromagnetically. For the tri-layers with thicker GaAs, the GaAs acts as an effective barrier for the carrier transport and decouples the two (Ga,Mn)As layers, which results in tunnel magnetoresistance ratio as high as 100% at 5 K.

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KW - Diluted magnetic semiconductors

KW - III-V semiconductors

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