TY - JOUR
T1 - Effect of gaas intermediary layer thickness on the properties of (Ga,Mn) as tri-layer structures
AU - Sato, Y.
AU - Chiba, D.
AU - Matsukura, F.
AU - Ohno, H.
N1 - Funding Information:
This work was partly supported by the IT-Program of Research Revolution 2002 (RR2002) from MEXT, a Grant-in-Aid from MEXT, and the 21st Century COE Program “System Construction of Global-Network Oriented Information Electronics.”
PY - 2005
Y1 - 2005
N2 - We have investigated the magnetic properties, current-voltage characteristics, and tunnel magnetoresistance of (Ga,Mn)As/GaAs/(Ga,Mn)As tri-layers having different thickness of the intermediary GaAs layer (1-7 nm). When the thickness of GaAs layer is less than 6 nm, the two (Ga,Mn)As layers couples ferromagnetically. For the tri-layers with thicker GaAs, the GaAs acts as an effective barrier for the carrier transport and decouples the two (Ga,Mn)As layers, which results in tunnel magnetoresistance ratio as high as 100% at 5 K.
AB - We have investigated the magnetic properties, current-voltage characteristics, and tunnel magnetoresistance of (Ga,Mn)As/GaAs/(Ga,Mn)As tri-layers having different thickness of the intermediary GaAs layer (1-7 nm). When the thickness of GaAs layer is less than 6 nm, the two (Ga,Mn)As layers couples ferromagnetically. For the tri-layers with thicker GaAs, the GaAs acts as an effective barrier for the carrier transport and decouples the two (Ga,Mn)As layers, which results in tunnel magnetoresistance ratio as high as 100% at 5 K.
KW - (Ga,Mn)
KW - As
KW - Diluted magnetic semiconductors
KW - III-V semiconductors
KW - TMR
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U2 - 10.1007/sl0948-005-0008-z
DO - 10.1007/sl0948-005-0008-z
M3 - Article
AN - SCOPUS:33645012266
VL - 18
SP - 345
EP - 347
JO - Journal of Superconductivity and Novel Magnetism
JF - Journal of Superconductivity and Novel Magnetism
SN - 1557-1939
IS - 3
ER -