Effect of gaas intermediary layer thickness on the properties of (Ga,Mn) as tri-layer structures

Y. Sato, D. Chiba, F. Matsukura, H. Ohno

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

We have investigated the magnetic properties, current-voltage characteristics, and tunnel magnetoresistance of (Ga,Mn)As/GaAs/(Ga,Mn)As tri-layers having different thickness of the intermediary GaAs layer (1-7 nm). When the thickness of GaAs layer is less than 6 nm, the two (Ga,Mn)As layers couples ferromagnetically. For the tri-layers with thicker GaAs, the GaAs acts as an effective barrier for the carrier transport and decouples the two (Ga,Mn)As layers, which results in tunnel magnetoresistance ratio as high as 100% at 5 K.

Original languageEnglish
Pages (from-to)345-347
Number of pages3
JournalJournal of Superconductivity and Novel Magnetism
Volume18
Issue number3
DOIs
Publication statusPublished - 2005 Dec 1

Keywords

  • (Ga,Mn)
  • As
  • Diluted magnetic semiconductors
  • III-V semiconductors
  • TMR

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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