Effect of Ga-doping on the thermoelectric properties of Ba-Ge type-III clathrate compounds

Jung Hwan Kim, Norihiko L. Okamoto, Katsushi Tanaka, Haruyuki Inui

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Effect of Ga addition on the thermoelectric properties of Ba-Ge type-III clathrate has been investigated as a function of Ga content and temperature. The substitution of Ga atom for Ge atom leads to the decrease of carrier (electron) concentration. Electrical conduction is of n-type for all clathrate compounds investigated and the values of electrical resistivity and Seebeck coefficient increase with the increase in the Ga content and in temperature. Both electronic and lattice thermal conductivity decrease with the increase in the Ga content because of the decreased carrier concentration and the increased extent of the rattling motion of Ba atoms encapsulated in open-dodecahedron, respectively. A very high ZT value of 1.25 is obtained at 670°C for Ba24Ga 15Ge85.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium Proceedings
Pages413-418
Number of pages6
Publication statusPublished - 2006 May 8
Externally publishedYes
Event2005 Materials Research Society Fall Meeting - Boston, MA, United States
Duration: 2005 Nov 282005 Dec 1

Publication series

NameMaterials Research Society Symposium Proceedings
Volume886
ISSN (Print)0272-9172

Other

Other2005 Materials Research Society Fall Meeting
CountryUnited States
CityBoston, MA
Period05/11/2805/12/1

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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