Effect of forced convection by crucible design in solution growth of SiC single crystal

Kazuhisa Kurashige; Masahiro Aoshima; Koichi Takei; Kuniharu Fujii; Masahiko Hiratani; Nachimuthu Senguttuvan; Tomohisa Kato; Toru Ujihara; Yuji Matsumoto; Hajime Okumura

doi:10.4028/www.scientific.net/MSF.821-823.22

Effect of forced convection by crucible design in solution growth of SiC single crystal

Kazuhisa Kurashige, Masahiro Aoshima, Koichi Takei, Kuniharu Fujii, Masahiko Hiratani, Nachimuthu Senguttuvan, Tomohisa Kato, Toru Ujihara, Yuji Matsumoto, Hajime Okumura

ENG - Applied Chemistry

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

4 Citations (Scopus)

Abstract

In this paper, we will discuss how to cope with the smoother growth front and higher growth rate by the forced convection. When the rotation rate of the upper part of the solution is different from that of the lower part in the crucible, the centrifugal force of the upper part is different from that of the lower part. As a result, a forced convection occurs in the solution. This kind of convection was achieved with accelerating/decelerating rotation of crucible and a plate fixed on the bottom of the crucible. By optimizing conditions of rotation program patterns and the crucible design for the forced convection, the growth rate could almost be doubled while maintaining smooth morphology.

Original language	English
Title of host publication	Silicon Carbide and Related Materials 2014
Editors	Didier Chaussende, Gabriel Ferro
Publisher	Trans Tech Publications Ltd
Pages	22-25
Number of pages	4
ISBN (Print)	9783038354789
DOIs	https://doi.org/10.4028/www.scientific.net/MSF.821-823.22
Publication status	Published - 2015
Event	European Conference on Silicon Carbide and Related Materials, ECSCRM 2014 - Grenoble, France Duration: 2014 Sep 21 → 2014 Sep 25

Publication series

Name	Materials Science Forum
Volume	821-823
ISSN (Print)	0255-5476
ISSN (Electronic)	1662-9752

Other

Other	European Conference on Silicon Carbide and Related Materials, ECSCRM 2014
Country/Territory	France
City	Grenoble
Period	14/9/21 → 14/9/25

Keywords

Forced convection
SiC
Solution growth

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Access to Document

10.4028/www.scientific.net/MSF.821-823.22

Cite this

Kurashige, K., Aoshima, M., Takei, K., Fujii, K., Hiratani, M., Senguttuvan, N., Kato, T., Ujihara, T., Matsumoto, Y., & Okumura, H. (2015). Effect of forced convection by crucible design in solution growth of SiC single crystal. In D. Chaussende, & G. Ferro (Eds.), Silicon Carbide and Related Materials 2014 (pp. 22-25). (Materials Science Forum; Vol. 821-823). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/MSF.821-823.22

Effect of forced convection by crucible design in solution growth of SiC single crystal. / Kurashige, Kazuhisa; Aoshima, Masahiro; Takei, Koichi et al.

Silicon Carbide and Related Materials 2014. ed. / Didier Chaussende; Gabriel Ferro. Trans Tech Publications Ltd, 2015. p. 22-25 (Materials Science Forum; Vol. 821-823).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Kurashige, K, Aoshima, M, Takei, K, Fujii, K, Hiratani, M, Senguttuvan, N, Kato, T, Ujihara, T, Matsumoto, Y & Okumura, H 2015, Effect of forced convection by crucible design in solution growth of SiC single crystal. in D Chaussende & G Ferro (eds), Silicon Carbide and Related Materials 2014. Materials Science Forum, vol. 821-823, Trans Tech Publications Ltd, pp. 22-25, European Conference on Silicon Carbide and Related Materials, ECSCRM 2014, Grenoble, France, 14/9/21. https://doi.org/10.4028/www.scientific.net/MSF.821-823.22

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title = "Effect of forced convection by crucible design in solution growth of SiC single crystal",

abstract = "In this paper, we will discuss how to cope with the smoother growth front and higher growth rate by the forced convection. When the rotation rate of the upper part of the solution is different from that of the lower part in the crucible, the centrifugal force of the upper part is different from that of the lower part. As a result, a forced convection occurs in the solution. This kind of convection was achieved with accelerating/decelerating rotation of crucible and a plate fixed on the bottom of the crucible. By optimizing conditions of rotation program patterns and the crucible design for the forced convection, the growth rate could almost be doubled while maintaining smooth morphology.",

keywords = "Forced convection, SiC, Solution growth",

author = "Kazuhisa Kurashige and Masahiro Aoshima and Koichi Takei and Kuniharu Fujii and Masahiko Hiratani and Nachimuthu Senguttuvan and Tomohisa Kato and Toru Ujihara and Yuji Matsumoto and Hajime Okumura",

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AU - Kurashige, Kazuhisa

AU - Aoshima, Masahiro

AU - Takei, Koichi

AU - Fujii, Kuniharu

AU - Hiratani, Masahiko

AU - Senguttuvan, Nachimuthu

AU - Kato, Tomohisa

AU - Ujihara, Toru

AU - Matsumoto, Yuji

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AB - In this paper, we will discuss how to cope with the smoother growth front and higher growth rate by the forced convection. When the rotation rate of the upper part of the solution is different from that of the lower part in the crucible, the centrifugal force of the upper part is different from that of the lower part. As a result, a forced convection occurs in the solution. This kind of convection was achieved with accelerating/decelerating rotation of crucible and a plate fixed on the bottom of the crucible. By optimizing conditions of rotation program patterns and the crucible design for the forced convection, the growth rate could almost be doubled while maintaining smooth morphology.

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Effect of forced convection by crucible design in solution growth of SiC single crystal

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