@inproceedings{32529c614a8c4fbba31c62679cda0f77,
title = "Effect of forced convection by crucible design in solution growth of SiC single crystal",
abstract = "In this paper, we will discuss how to cope with the smoother growth front and higher growth rate by the forced convection. When the rotation rate of the upper part of the solution is different from that of the lower part in the crucible, the centrifugal force of the upper part is different from that of the lower part. As a result, a forced convection occurs in the solution. This kind of convection was achieved with accelerating/decelerating rotation of crucible and a plate fixed on the bottom of the crucible. By optimizing conditions of rotation program patterns and the crucible design for the forced convection, the growth rate could almost be doubled while maintaining smooth morphology.",
keywords = "Forced convection, SiC, Solution growth",
author = "Kazuhisa Kurashige and Masahiro Aoshima and Koichi Takei and Kuniharu Fujii and Masahiko Hiratani and Nachimuthu Senguttuvan and Tomohisa Kato and Toru Ujihara and Yuji Matsumoto and Hajime Okumura",
year = "2015",
month = jan,
day = "1",
doi = "10.4028/www.scientific.net/MSF.821-823.22",
language = "English",
isbn = "9783038354789",
series = "Materials Science Forum",
publisher = "Trans Tech Publications Ltd",
pages = "22--25",
editor = "Didier Chaussende and Gabriel Ferro",
booktitle = "Silicon Carbide and Related Materials 2014",
note = "European Conference on Silicon Carbide and Related Materials, ECSCRM 2014 ; Conference date: 21-09-2014 Through 25-09-2014",
}