Effect of forced convection by crucible design in solution growth of SiC single crystal

Kazuhisa Kurashige, Masahiro Aoshima, Koichi Takei, Kuniharu Fujii, Masahiko Hiratani, Nachimuthu Senguttuvan, Tomohisa Kato, Toru Ujihara, Yuji Matsumoto, Hajime Okumura

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

In this paper, we will discuss how to cope with the smoother growth front and higher growth rate by the forced convection. When the rotation rate of the upper part of the solution is different from that of the lower part in the crucible, the centrifugal force of the upper part is different from that of the lower part. As a result, a forced convection occurs in the solution. This kind of convection was achieved with accelerating/decelerating rotation of crucible and a plate fixed on the bottom of the crucible. By optimizing conditions of rotation program patterns and the crucible design for the forced convection, the growth rate could almost be doubled while maintaining smooth morphology.

Original languageEnglish
Title of host publicationSilicon Carbide and Related Materials 2014
EditorsDidier Chaussende, Gabriel Ferro
PublisherTrans Tech Publications Ltd
Pages22-25
Number of pages4
ISBN (Print)9783038354789
DOIs
Publication statusPublished - 2015 Jan 1
EventEuropean Conference on Silicon Carbide and Related Materials, ECSCRM 2014 - Grenoble, France
Duration: 2014 Sep 212014 Sep 25

Publication series

NameMaterials Science Forum
Volume821-823
ISSN (Print)0255-5476
ISSN (Electronic)1662-9752

Other

OtherEuropean Conference on Silicon Carbide and Related Materials, ECSCRM 2014
CountryFrance
CityGrenoble
Period14/9/2114/9/25

Keywords

  • Forced convection
  • SiC
  • Solution growth

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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