TY - GEN
T1 - Effect of forced convection by crucible design in solution growth of SiC single crystal
AU - Kurashige, Kazuhisa
AU - Aoshima, Masahiro
AU - Takei, Koichi
AU - Fujii, Kuniharu
AU - Hiratani, Masahiko
AU - Senguttuvan, Nachimuthu
AU - Kato, Tomohisa
AU - Ujihara, Toru
AU - Matsumoto, Yuji
AU - Okumura, Hajime
N1 - Publisher Copyright:
© (2015) Trans Tech Publications, Switzerland.
Copyright:
Copyright 2020 Elsevier B.V., All rights reserved.
PY - 2015
Y1 - 2015
N2 - In this paper, we will discuss how to cope with the smoother growth front and higher growth rate by the forced convection. When the rotation rate of the upper part of the solution is different from that of the lower part in the crucible, the centrifugal force of the upper part is different from that of the lower part. As a result, a forced convection occurs in the solution. This kind of convection was achieved with accelerating/decelerating rotation of crucible and a plate fixed on the bottom of the crucible. By optimizing conditions of rotation program patterns and the crucible design for the forced convection, the growth rate could almost be doubled while maintaining smooth morphology.
AB - In this paper, we will discuss how to cope with the smoother growth front and higher growth rate by the forced convection. When the rotation rate of the upper part of the solution is different from that of the lower part in the crucible, the centrifugal force of the upper part is different from that of the lower part. As a result, a forced convection occurs in the solution. This kind of convection was achieved with accelerating/decelerating rotation of crucible and a plate fixed on the bottom of the crucible. By optimizing conditions of rotation program patterns and the crucible design for the forced convection, the growth rate could almost be doubled while maintaining smooth morphology.
KW - Forced convection
KW - SiC
KW - Solution growth
UR - http://www.scopus.com/inward/record.url?scp=84950335718&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84950335718&partnerID=8YFLogxK
U2 - 10.4028/www.scientific.net/MSF.821-823.22
DO - 10.4028/www.scientific.net/MSF.821-823.22
M3 - Conference contribution
AN - SCOPUS:84950335718
SN - 9783038354789
T3 - Materials Science Forum
SP - 22
EP - 25
BT - Silicon Carbide and Related Materials 2014
A2 - Chaussende, Didier
A2 - Ferro, Gabriel
PB - Trans Tech Publications Ltd
T2 - European Conference on Silicon Carbide and Related Materials, ECSCRM 2014
Y2 - 21 September 2014 through 25 September 2014
ER -