Effect of exposure to group III alkyls on compound semiconductor surfaces observed by x-ray photoelectron spectroscopy

H. Ishii, H. Ohno, K. Matsuzaki, H. Hasegawa

Research output: Contribution to journalArticlepeer-review

29 Citations (Scopus)

Abstract

Clean surfaces of GaAs and InAs prepared by molecular beam epitaxy have been epitaxy have been exposed to trimethylgallium and diethylgalliumchloride at various temperatures and the resultant change has been observed in situ by X-ray photoelectron spectroscopy. Saturation of amount of Ga deposited onto the surface to about 1 monolayer has been observed at substrate temperature above 320°C, which results in atomic layer epitaxy. No appreciable increase of carbon nor chlorine has been observed after exposure to group III alkyls.

Original languageEnglish
Pages (from-to)132-135
Number of pages4
JournalJournal of Crystal Growth
Volume95
Issue number1-4
DOIs
Publication statusPublished - 1989 Feb 2
Externally publishedYes

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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