Effect of erbium silicide crystallinity for low barrier contact between erbium silicide and n-type silicon

Hiroaki Tanaka, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The electrical and physical properties of ErSix on n-type Si(100) and Si(551) surfaces are reported. The Schottky barrier heights and the crystallinity of ErSix depend on the Si surface orientation. And the ErSix crystallinity affects the work function of ErSix. These silicidation reactions are very important to develop the high current drivability devices using any surface orientation.

Original languageEnglish
Title of host publicationDielectric Materials and Metals for Nanoelectronics and Photonics 10
Pages343-348
Number of pages6
Edition4
DOIs
Publication statusPublished - 2012 Dec 1
EventSymposium on Dielectric Materials and Metals for Nanoelectronics and Photonics - 10 - 222nd ECS Meeting - Honolulu, HI, United States
Duration: 2012 Oct 72012 Oct 12

Publication series

NameECS Transactions
Number4
Volume50
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

OtherSymposium on Dielectric Materials and Metals for Nanoelectronics and Photonics - 10 - 222nd ECS Meeting
CountryUnited States
CityHonolulu, HI
Period12/10/712/10/12

ASJC Scopus subject areas

  • Engineering(all)

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