Effect of epitaxial layer crystal quality on DC and RF characteristics of AlGaN/GaN short-gate HEMTs

K. Shiojima, T. Makimura, T. Maruyama, T. Suemitsu, N. Shigekawa, M. Hiroki, H. Yokoyama

Research output: Contribution to journalConference articlepeer-review

5 Citations (Scopus)

Abstract

The DC and RF performances of short-gate AlGaN/GaN high-electron transistors (HEMT) on SiC and sapphire substrates have been investigated. There were differences in surface morphology, electron mobility, and contact resistance between SiC and sapphire wafers. The contact resistance limited and dispersed measured transconductance (gm). The intrinsic gm after subtraction of the source resistance contribution and gate-length dependences of cut-off frequency were the same. These results indicates that the effective electron velocity is the same for both samples.

Original languageEnglish
Pages (from-to)2360-2363
Number of pages4
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume3
DOIs
Publication statusPublished - 2006 Jul 31
Externally publishedYes
Event6th International Conference on Nitride Semiconductors, ICNS-6 - Bremen, Germany
Duration: 2005 Aug 282005 Sep 2

ASJC Scopus subject areas

  • Condensed Matter Physics

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