Effect of electron beam irradiation on si sm-face cleaning in ultrahigh-vacumn system

Hiroshi Miura, Kouichi Ohtaka, Daisuke Shindo

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    1 Citation (Scopus)

    Abstract

    Effect of electron beam irradiation (15 kV) on Si surface cleaning prior to epitaxial growth in an ultrahigh- vacuum system was investigated. A CaF2 film was epitaxially grown on the Si surface, and the interface was observed by high-voltage electron microscopy. Amorphous layers, which were observed in the interface prepared with conventional thermal treatment at 750° C, became much smaller with electron beam irradiation after the thermal treatment. Based on the electron microscope observation, the effect of electron beam irradiation on Si surface cleaning was briefly discussed.

    Original languageEnglish
    Pages (from-to)L573-L576
    JournalJapanese journal of applied physics
    Volume34
    Issue number5A
    DOIs
    Publication statusPublished - 1995 May

    Keywords

    • Calcium fluoride
    • Electron beam irradiation
    • Epitaxial growth
    • High-voltage electron microscopy
    • Native oxide
    • Silicon
    • Surface cleaning

    ASJC Scopus subject areas

    • Engineering(all)
    • Physics and Astronomy(all)

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