Effect of electrode composition on the tunnel magnetoresistance of pseudo-spin-valve magnetic tunnel junction with a MgO tunnel barrier

Y. M. Lee, J. Hayakawa, S. Ikeda, F. Matsukura, H. Ohno

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264 Citations (Scopus)

Abstract

The authors investigate the effect of electrode composition on the tunnel magnetoresistance (TMR) ratio of (Cox Fe100-x) 80 B20 MgO (Cox Fe100-x) 80 B20 pseudo-spin-valve magnetic tunnel junctions (MTJs). TMR ratio is found to strongly depend on the composition and thicknesses of CoFeB. High resolution transmission electron microscopy shows that the crystallization process of CoFeB during annealing depends on the composition and the thicknesses of the CoFeB film, resulting in different TMR ratios. A TMR ratio of 500% at room temperature and of 1010% at 5 K are observed in a MTJ having 4.3 nm and 4-nm -thick (Co25 Fe75) 80 B20 electrodes with a 2.1-nm -thick MgO barrier annealed at 475 °C.

Original languageEnglish
Article number212507
JournalApplied Physics Letters
Volume90
Issue number21
DOIs
Publication statusPublished - 2007

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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