Effect of Drain-to-Source Voltage on Random Telegraph Noise Based on Statistical Analysis of MOSFETs with Various Gate Shapes

R. Akimoto, R. Kuroda, Akinobu Teramoto, T. Mawaki, S. Ichino, T. Suwa, S. Sugawa

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this work, temporal noise characteristics of 11520 MOSFETs were measured for each of rectangular and trapezoidal shaped gates, and characteristics of random telegraph noise (RTN), such as amplitude and time constants under various drain-to-source voltage (VDS) conditions were extracted and analyzed. It was found that RTN is dominated by traps at the minimum gate width in the channel formed under each of the operating bias conditions, and traps at the source side are most influential under a large VDS. The trap location along the source-drain direction is estimated by the VDS dependencies of RTN characteristics.

Original languageEnglish
Title of host publication2020 IEEE International Reliability Physics Symposium, IRPS 2020 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781728131993
DOIs
Publication statusPublished - 2020 Apr
Event2020 IEEE International Reliability Physics Symposium, IRPS 2020 - Virtual, Online, United States
Duration: 2020 Apr 282020 May 30

Publication series

NameIEEE International Reliability Physics Symposium Proceedings
Volume2020-April
ISSN (Print)1541-7026

Conference

Conference2020 IEEE International Reliability Physics Symposium, IRPS 2020
CountryUnited States
CityVirtual, Online
Period20/4/2820/5/30

Keywords

  • Array Test Circuit
  • Drain-to-Source Voltage
  • Random Telegraph Noise (RTN)
  • Trapezoidal Gate Transistor

ASJC Scopus subject areas

  • Engineering(all)

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