Effect of drain current on appearance probability and amplitude of random telegraph noise in low-noise CMOS image sensors

Shinya Ichino, Takezo Mawaki, Akinobu Teramoto, Rihito Kuroda, Hyeonwoo Park, Shunichi Wakashima, Tetsuya Goto, Tomoyuki Suwa, Shigetoshi Sugawa

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Random telegraph noise (RTN), which occurs in in-pixel source follower (SF) transistors, has become one of the most critical problems in high-sensitivity CMOS image sensors (CIS) because it is a limiting factor of dark random noise. In this paper, the behaviors of RTN toward changes in SF drain current conditions were analyzed using a low-noise array test circuit measurement system with a floor noise of 35μVrms. In addition to statistical analysis by measuring a large number of transistors (18048 transistors), we also analyzed the behaviors of RTN parameters such as amplitude and time constants in the individual transistors. It is demonstrated that the appearance probability of RTN becomes small under a small drain current condition, although large-amplitude RTN tends to appear in a very small number of cells.

Original languageEnglish
Article number04FF08
JournalJapanese journal of applied physics
Volume57
Issue number4
DOIs
Publication statusPublished - 2018 Apr

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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