Effect of doping and counterdoping on high-pressure phase transitions of silicon

J. J. Guo, D. Pan, X. Q. Yan, T. Fujita, M. W. Chen

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)

Abstract

The influence of dopants and counterdopants on high-pressure phase transitions of silicon was investigated by high-pressure Raman microscopy. A small amount of dopants were found to dramatically influence the high pressure stability of silicon. The combination of doping and counterdoping provides an effective way to manipulate the critical pressures of the phase transitions, which offers unique insights on atomic mechanisms of high pressure phase transitions of Si.

Original languageEnglish
Article number251910
JournalApplied Physics Letters
Volume96
Issue number25
DOIs
Publication statusPublished - 2010 Jun 21

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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