Effect of dopant concentration on oxidation-induced stacking faults in boron-doped cz silicon

Shigefusa Chichibu, Tsuyoshi Harada, Satoru Matsumoto

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

The length of oxidation-induced stacking faults strongly depends on the boron concentration in extrinsic conditions at the oxidation temperature. This behavior can be interpreted by the generation of silicon self-interstitials by the Fermi level effect attributed to the heavy boron doping.

Original languageEnglish
Pages (from-to)L1543-L1547
JournalJapanese journal of applied physics
Volume27
Issue number8 A
DOIs
Publication statusPublished - 1988 Aug
Externally publishedYes

Keywords

  • CZ silicon
  • Doping effect
  • Oxidation-induced stacking faults

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Effect of dopant concentration on oxidation-induced stacking faults in boron-doped cz silicon'. Together they form a unique fingerprint.

  • Cite this