The length of oxidation-induced stacking faults strongly depends on the boron concentration in extrinsic conditions at the oxidation temperature. This behavior can be interpreted by the generation of silicon self-interstitials by the Fermi level effect attributed to the heavy boron doping.
- CZ silicon
- Doping effect
- Oxidation-induced stacking faults
ASJC Scopus subject areas
- Physics and Astronomy(all)