Effect of dissolved oxygen on etching process of Si(111) in 2.5% NH3 solution

Hirokazu Fukidome, Michio Matsumura

Research output: Contribution to journalArticlepeer-review

21 Citations (Scopus)


Etching processes of Si(111) in 2.5% NH3 solution (pH 12) were examined with attention to the effect of oxygen dissolved in the solution. Atomic force microscopy observation showed that many etch pits were formed on the surface in the solution containing dissolved oxygen at high concentrations. In contrast, the surface was atomically flattened by removing dissolved oxygen from the solution. Infrared absorption spectroscopy revealed that the surface was hydrogen-terminated after treatment with the solutions with and without dissolved oxygen, and that dissolved oxygen degraded the homogeneity of the surface. It was also found that dissolved oxygen lowered the etching rate of Si(111) in the solution.

Original languageEnglish
Pages (from-to)L649-L653
JournalSurface Science
Issue number3
Publication statusPublished - 2000 Sep 10
Externally publishedYes

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry


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