Effect of diffusion barrier in the thermally annealed exchange-biased IrMn-CoFe electrode in magnetic tunnel junctions

Chung Sik Yoo, H. D. Jeong, J. H. Lee, C. S. Yoon, C. K. Kim, J. H. Yuh, Y. Ando, H. Kubota, T. Miyazaki

Research output: Contribution to journalConference articlepeer-review

5 Citations (Scopus)

Abstract

Exchange-biased electrodes IrMn/Ta(2 Å)/CoFe/ AlOx and IrMn/CoFe/Ta(2 Å)-AlOx used in a magnetic tunnel junction were annealed at 300 °C to study the Mn diffusion characteristics. Auger electron spectroscopy and X-ray photoelectron spectroscopy analysis of the annealed electrodes show that the Ta diffusion barrier effectively blocked the Mn migration, regardless of the barrier location. Also concluded from the study was that the Mn migration is largely enhanced by the preferential oxidation of Mn.

Original languageEnglish
Pages (from-to)2715-2717
Number of pages3
JournalIEEE Transactions on Magnetics
Volume38
Issue number5 I
DOIs
Publication statusPublished - 2002 Sep 1
Event2002 International Magnetics Conference (Intermag 2002) - Amsterdam, Netherlands
Duration: 2002 Apr 282002 May 2

Keywords

  • Diffusion processes
  • Magnetic materials
  • Tunneling magnetoresistance

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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