Effect of device temperature on domain wall motion in a perpendicularly magnetized Co/Ni wire

Hironobu Tanigawa, Katsumi Suemitsu, Shunsuke Fukami, Norikazu Ohshima, Tetsuhiro Suzuki, Eiji Kariyada, Nobuyuki Ishiwata

Research output: Contribution to journalArticle

20 Citations (Scopus)

Abstract

This paper describes experimental results obtained from measuring the dependence of device temperature on the current for domain wall motion in a Co/Ni wire having perpendicular magnetic anisotropy. Devices with different insulating layer thicknesses were prepared in order to control the device temperature. A stable domain wall motion was observed up to the temperature at which perpendicular magnetic anisotropy vanishes. Moreover, the current required for domain wall motion was independent of the device temperature.

Original languageEnglish
Article number013007
JournalApplied Physics Express
Volume4
Issue number1
DOIs
Publication statusPublished - 2011 Jan 1
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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  • Cite this

    Tanigawa, H., Suemitsu, K., Fukami, S., Ohshima, N., Suzuki, T., Kariyada, E., & Ishiwata, N. (2011). Effect of device temperature on domain wall motion in a perpendicularly magnetized Co/Ni wire. Applied Physics Express, 4(1), [013007]. https://doi.org/10.1143/APEX.4.013007