Effect of deposition temperature on chemical structure of lanthanum oxide/Si interface structure

H. Nohira; T. Matsuda; K. Tachi; Y. Shiino; J. Song; Y. Kuroki; Jin Aun Ng; P. Ahmet; K. Kakushima; K. Tsutsui; E. Ikenaga; K. Kobayashi; H. Iwai; T. Hattori

doi:10.1149/1.2356276

Effect of deposition temperature on chemical structure of lanthanum oxide/Si interface structure

H. Nohira, T. Matsuda, K. Tachi, Y. Shiino, J. Song, Y. Kuroki, Jin Aun Ng, P. Ahmet, K. Kakushima, K. Tsutsui, E. Ikenaga, K. Kobayashi, H. Iwai, T. Hattori

Research output: Contribution to journal › Conference article › peer-review

5 Citations (Scopus)

Abstract

The effect of substrate-temperature during the deposition of lanthanum oxide on the chemical structure of lanthanum oxide/Si(100) interfacial transition layer formed between lanthanum oxide and Si-substrate was studied from the measurements of angle-resolved Si 1s, O 1s and La 3d_5/2 photoelectron spectra. In the case of the deposition at room temperature the amount of lanthanum silicate (La-silicate) was extremely small, and was not affected by the post deposition annealing (PDA) at 300°C, and increased by PDA at temperature above 500°C. On the other hand, in the case of the deposition at 300°C the amount of La-silicate increased appreciably by PDA even at 300°C. Therefore, the existence of La-silicate accelerates the formation of La-silicate by PDA. copyright The Electrochemical Society.

Original language	English
Pages (from-to)	169-173
Number of pages	5
Journal	ECS Transactions
Volume	3
Issue number	2
DOIs	https://doi.org/10.1149/1.2356276
Publication status	Published - 2006
Externally published	Yes
Event	Advanced Gate Stack, Source/Drain, and Channel Engineering fo Si-Based CMOS 2: New Materials, Processes, and Equipment - 210th Electrochemical Society Meeting - Cancun, Mexico Duration: 2006 Oct 29 → 2006 Nov 3

ASJC Scopus subject areas

Engineering(all)

Access to Document

10.1149/1.2356276

Fingerprint Dive into the research topics of 'Effect of deposition temperature on chemical structure of lanthanum oxide/Si interface structure'. Together they form a unique fingerprint.

Cite this

Effect of deposition temperature on chemical structure of lanthanum oxide/Si interface structure. / Nohira, H.; Matsuda, T.; Tachi, K.; Shiino, Y.; Song, J.; Kuroki, Y.; Ng, Jin Aun; Ahmet, P.; Kakushima, K.; Tsutsui, K.; Ikenaga, E.; Kobayashi, K.; Iwai, H.; Hattori, T.

In: ECS Transactions, Vol. 3, No. 2, 2006, p. 169-173.

Research output: Contribution to journal › Conference article › peer-review

@article{813b16c5493d492ab008b16ac834a53c,

title = "Effect of deposition temperature on chemical structure of lanthanum oxide/Si interface structure",

abstract = "The effect of substrate-temperature during the deposition of lanthanum oxide on the chemical structure of lanthanum oxide/Si(100) interfacial transition layer formed between lanthanum oxide and Si-substrate was studied from the measurements of angle-resolved Si 1s, O 1s and La 3d5/2 photoelectron spectra. In the case of the deposition at room temperature the amount of lanthanum silicate (La-silicate) was extremely small, and was not affected by the post deposition annealing (PDA) at 300°C, and increased by PDA at temperature above 500°C. On the other hand, in the case of the deposition at 300°C the amount of La-silicate increased appreciably by PDA even at 300°C. Therefore, the existence of La-silicate accelerates the formation of La-silicate by PDA. copyright The Electrochemical Society.",

author = "H. Nohira and T. Matsuda and K. Tachi and Y. Shiino and J. Song and Y. Kuroki and Ng, {Jin Aun} and P. Ahmet and K. Kakushima and K. Tsutsui and E. Ikenaga and K. Kobayashi and H. Iwai and T. Hattori",

year = "2006",

doi = "10.1149/1.2356276",

language = "English",

volume = "3",

pages = "169--173",

journal = "ECS Transactions",

issn = "1938-5862",

publisher = "Electrochemical Society, Inc.",

number = "2",

note = "Advanced Gate Stack, Source/Drain, and Channel Engineering fo Si-Based CMOS 2: New Materials, Processes, and Equipment - 210th Electrochemical Society Meeting ; Conference date: 29-10-2006 Through 03-11-2006",

}

TY - JOUR

T1 - Effect of deposition temperature on chemical structure of lanthanum oxide/Si interface structure

AU - Nohira, H.

AU - Matsuda, T.

AU - Tachi, K.

AU - Shiino, Y.

AU - Song, J.

AU - Kuroki, Y.

AU - Ng, Jin Aun

AU - Ahmet, P.

AU - Kakushima, K.

AU - Tsutsui, K.

AU - Ikenaga, E.

AU - Kobayashi, K.

AU - Iwai, H.

AU - Hattori, T.

PY - 2006

Y1 - 2006

N2 - The effect of substrate-temperature during the deposition of lanthanum oxide on the chemical structure of lanthanum oxide/Si(100) interfacial transition layer formed between lanthanum oxide and Si-substrate was studied from the measurements of angle-resolved Si 1s, O 1s and La 3d5/2 photoelectron spectra. In the case of the deposition at room temperature the amount of lanthanum silicate (La-silicate) was extremely small, and was not affected by the post deposition annealing (PDA) at 300°C, and increased by PDA at temperature above 500°C. On the other hand, in the case of the deposition at 300°C the amount of La-silicate increased appreciably by PDA even at 300°C. Therefore, the existence of La-silicate accelerates the formation of La-silicate by PDA. copyright The Electrochemical Society.

AB - The effect of substrate-temperature during the deposition of lanthanum oxide on the chemical structure of lanthanum oxide/Si(100) interfacial transition layer formed between lanthanum oxide and Si-substrate was studied from the measurements of angle-resolved Si 1s, O 1s and La 3d5/2 photoelectron spectra. In the case of the deposition at room temperature the amount of lanthanum silicate (La-silicate) was extremely small, and was not affected by the post deposition annealing (PDA) at 300°C, and increased by PDA at temperature above 500°C. On the other hand, in the case of the deposition at 300°C the amount of La-silicate increased appreciably by PDA even at 300°C. Therefore, the existence of La-silicate accelerates the formation of La-silicate by PDA. copyright The Electrochemical Society.

UR - http://www.scopus.com/inward/record.url?scp=33846996861&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33846996861&partnerID=8YFLogxK

U2 - 10.1149/1.2356276

DO - 10.1149/1.2356276

M3 - Conference article

AN - SCOPUS:33846996861

VL - 3

SP - 169

EP - 173

JO - ECS Transactions

JF - ECS Transactions

SN - 1938-5862

IS - 2

T2 - Advanced Gate Stack, Source/Drain, and Channel Engineering fo Si-Based CMOS 2: New Materials, Processes, and Equipment - 210th Electrochemical Society Meeting

Y2 - 29 October 2006 through 3 November 2006

ER -