Abstract
The effect of substrate-temperature during the deposition of lanthanum oxide on the chemical structure of lanthanum oxide/Si(100) interfacial transition layer formed between lanthanum oxide and Si-substrate was studied from the measurements of angle-resolved Si 1s, O 1s and La 3d5/2 photoelectron spectra. In the case of the deposition at room temperature the amount of lanthanum silicate (La-silicate) was extremely small, and was not affected by the post deposition annealing (PDA) at 300°C, and increased by PDA at temperature above 500°C. On the other hand, in the case of the deposition at 300°C the amount of La-silicate increased appreciably by PDA even at 300°C. Therefore, the existence of La-silicate accelerates the formation of La-silicate by PDA. copyright The Electrochemical Society.
Original language | English |
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Pages (from-to) | 169-173 |
Number of pages | 5 |
Journal | ECS Transactions |
Volume | 3 |
Issue number | 2 |
DOIs | |
Publication status | Published - 2006 |
Externally published | Yes |
Event | Advanced Gate Stack, Source/Drain, and Channel Engineering fo Si-Based CMOS 2: New Materials, Processes, and Equipment - 210th Electrochemical Society Meeting - Cancun, Mexico Duration: 2006 Oct 29 → 2006 Nov 3 |
ASJC Scopus subject areas
- Engineering(all)