Effect of delamination at chip/encapsulant interface on chip stress and transistor characteristics

Hideo Miura, Tetsuo Kumazawa, Asao Nishimura

Research output: Contribution to conferencePaperpeer-review

17 Citations (Scopus)

Abstract

The change process of the amplifier gain of bipolar transistors encapsulated in small outline J-leaded packages (SOJ-type packages) during temperature cycling test is discussed. The amplifier gain changes almost linearly with the applied uni-axial stress. The residual stress of the LSI chip is found to change during the temperature cycling test by applying stress-sensing test chips. It is found by applying a finite element analysis and ultrasonic inspection that the stress change is due to delamination at interface between the LSI chip and the encapsulant resin. The predicted amplifier gain change due to this delamination agrees well with the measured result.

Original languageEnglish
Pages73-78
Number of pages6
Publication statusPublished - 1995 Dec 1
Externally publishedYes
EventProceedings of the 1995 ASME International Mechanical Engineering Congress and Exposition - San Francisco, CA, USA
Duration: 1995 Nov 121995 Nov 17

Other

OtherProceedings of the 1995 ASME International Mechanical Engineering Congress and Exposition
CitySan Francisco, CA, USA
Period95/11/1295/11/17

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Mechanical Engineering

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