Effect of Defects on the Grain and Grain Boundary Strength in Polycrystalline Copper Thin Films

Ken Suzuki, Fan Yiqing, Yifan Luo, Hideo Miura

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this study, grain boundary quality in terms of order of atomic arrangement of electroplated copper thin films was evaluated by using the IQ (Image Quality) value obtained from an electron back-scatter diffraction (EBSD) method, and the grain and grain boundary strength was evaluated by applying micro tensile test. In addition, in order to investigate the relationship between the strength and grain boundary quality, molecular dynamics (MD) simulations were applied to analyze the deformation behavior of a bicrystal sample and its strength. The variation of the strength and deformation property were attributed to the higher defect density around grain boundaries than that in grains, which impeded the development of slip systems.

Original languageEnglish
Title of host publicationSISPAD 2018 - 2018 International Conference on Simulation of Semiconductor Processes and Devices, Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages88-91
Number of pages4
ISBN (Electronic)9781538667880
DOIs
Publication statusPublished - 2018 Nov 28
Event2018 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2018 - Austin, United States
Duration: 2018 Sep 242018 Sep 26

Publication series

NameInternational Conference on Simulation of Semiconductor Processes and Devices, SISPAD
Volume2018-September

Other

Other2018 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2018
CountryUnited States
CityAustin
Period18/9/2418/9/26

Keywords

  • Crystallinity
  • Electroplated copper
  • Grain Boundary
  • Molecular dynamics
  • Reliability
  • Strength

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Computer Science Applications
  • Modelling and Simulation

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  • Cite this

    Suzuki, K., Yiqing, F., Luo, Y., & Miura, H. (2018). Effect of Defects on the Grain and Grain Boundary Strength in Polycrystalline Copper Thin Films. In SISPAD 2018 - 2018 International Conference on Simulation of Semiconductor Processes and Devices, Proceedings (pp. 88-91). [8551672] (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD; Vol. 2018-September). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SISPAD.2018.8551672