Effect of CVD Mn oxide layer as Cu diffusion barrier for TSV

M. Murugesan, J. C. Bea, K. W. Lee, T. Fukushima, T. Tanaka, M. Koyanagi, Y. Sutou, H. Wang, J. Koike

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

The effectiveness of thermal chemical-vapor-deposited (CVD) manganese oxide (MnOx) for their application in the copper (Cu)-through-silicon-via (TSV) structure as a barrier layer was investigated by X-ray photo-electron spectroscopy (XPS), transmission electron spectroscopy (TEM), and capacitance-voltage (C-V) measurements. TEM data revealed the conformal growth of 20 nm-thick MnOx on the surface of plasma-TEOS SiO2 in the sidewall of TSV by thermal CVD. An excellent barrier property for MnOx over the thermal SiO2 was confirmed up to the maximum annealing temperature of 500 °C. In the case of plasma-TEOS SiO2, the barrier property was good up to 400 °C, but beyond that temperature, the barrier property was found deteriorated. On the contrary, the barrier performance of MnOx grown on the surface of ozone-TEOS SiO2 was found to be negligibly small. Even at room-temperature, we did observe the Cu2p signal emanating from MnOx/SiO2 region. Therefore, care must be taken while using either MnOx as a barrier layer upon ozone-TEOS SiO2 or ozone-TEOS SiO 2 itself as a dielectric liner in along the side wall of TSVs, before integrating them into 3D-LSIs.

Original languageEnglish
Title of host publication2013 IEEE International 3D Systems Integration Conference, 3DIC 2013
DOIs
Publication statusPublished - 2013 Dec 1
Event2013 IEEE International 3D Systems Integration Conference, 3DIC 2013 - San Francisco, CA, United States
Duration: 2013 Oct 22013 Oct 4

Publication series

Name2013 IEEE International 3D Systems Integration Conference, 3DIC 2013

Other

Other2013 IEEE International 3D Systems Integration Conference, 3DIC 2013
CountryUnited States
CitySan Francisco, CA
Period13/10/213/10/4

Keywords

  • Barrier layer
  • Cu-diffusion
  • MnOx
  • TSV
  • XPS

ASJC Scopus subject areas

  • Computer Graphics and Computer-Aided Design
  • Computer Science Applications

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    Murugesan, M., Bea, J. C., Lee, K. W., Fukushima, T., Tanaka, T., Koyanagi, M., Sutou, Y., Wang, H., & Koike, J. (2013). Effect of CVD Mn oxide layer as Cu diffusion barrier for TSV. In 2013 IEEE International 3D Systems Integration Conference, 3DIC 2013 [6702364] (2013 IEEE International 3D Systems Integration Conference, 3DIC 2013). https://doi.org/10.1109/3DIC.2013.6702364