Effect of crystallographic orientation on structural response of silicon to femtosecond laser irradiation

Xin Zhang, Liang Zhang, Sergey Mironov, Rongshi Xiao, Liang Guo, Ting Huang

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

Femtosecond laser has been widely utilized for modification of crystal structure to achieve desired functions. So far, however, the effect of crystallographic orientation on the induced structure by femtosecond laser processing has yet been comprehensively studied. The present work is undertaken in an attempt to fill this gap in our knowledge. To this end, commercial-purity Si is used as a target material and high-resolution transmission electron microscopy as well as electron backscatter diffraction are applied to examine the irradiation-induced microstructural changes. The structural response of the pulsed material is found to be principally influenced by the crystallographic orientation of the target surface. Specifically, at the surface orientation close to {111}, a pronounced amorphization effect is observed whereas no disordered material is detected at the orientations close to {100}. This phenomenon could be explained by the lowest crystallization speed required by the (111) surface due to its smallest surface energy. Compared with nanosecond laser, non-thermal melting induced by femtosecond laser induces mild thermal gradient and favors recrystallization.

Original languageEnglish
Article number196
JournalApplied Physics A: Materials Science and Processing
Volume127
Issue number3
DOIs
Publication statusPublished - 2021 Mar
Externally publishedYes

Keywords

  • Amorphization
  • Crystallographic orientation
  • Femtosecond laser
  • Silicon

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Science(all)

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