Effect of crystal defects on laser-induced-damage tolerance of organic crystal, 4-dimethylamino-N-methyl-4-stilbazolium tosylate

Yoshinori Takahashi, Kazumasa Sugiyama, Srinivasan Brahadeeswaran, Shinji Onzuka, Tomosumi Kamimura, Masashi Yoshimura, Yusuke Mori, Kunio Yoshida, Takatomo Sasaki

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

We investigated various defects of the organic 4-dimethylamino-N-methyl-4- stilbazolium tosylate (DAST) crystal to improve its laser-induced-damage tolerance for high-power terahertz (THz) application. We used DAST crystals grown by the slow-cooling method in methanol solution, and an irradiated infrared laser with a wavelength of 1550 nm without DAST absorption. It was found that laser damage was easily caused by crystal defects such as a rough surface, twin boundaries, and narrow-line defects (NLDs) in the bulk. In particular, NLDs are a serious problem that degrade the bulk laser-induced-damage tolerance of DAST crystals. The DAST crystals without such defects have high laser-induced-damage tolerance. To suppress the formation of crystal defects, we modified the crystal-growth conditions, and succeeded in growing PAST crystals with fewer defects than crystals obtained by the conventional growth process.

Original languageEnglish
Pages (from-to)318-323
Number of pages6
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume46
Issue number1
DOIs
Publication statusPublished - 2007 Jan 10
Externally publishedYes

Keywords

  • Crystal defect
  • Crystal growth
  • DAST
  • Laser tolerance
  • Laser-induced damage
  • Organic crystal
  • Terahertz generation

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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