Electrical and physical properties of ErSix on n-type Si(100) surfaces with an alkaline solution etching are investigated. The (111) facet of Si surface affects the Schottky barrier height (SBH) between ErSix and n-type Si, because the SBH depends on the surface orientation of Si. The orientation of the surface is a key parameter for reducing contact resistance for high performance MISFETs. These silicidation reactions are very important to develop the high current drivability devices.
|Number of pages||7|
|Publication status||Published - 2014 Jan 1|
|Event||International Symposium on Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 4 - 225th ECS Meeting - Orlando, United States|
Duration: 2014 May 11 → 2014 May 15
ASJC Scopus subject areas