Effect of composition rate on erbium silicide work function on different silicon surface orientation

Hiroaki Tanaka; Akinobu Teramoto; Tsukasa Motoya; Shigetoshi Sugawa; Tadahiro Ohmi

doi:10.1149/05301.0343ecst

Effect of composition rate on erbium silicide work function on different silicon surface orientation

Hiroaki Tanaka, Akinobu Teramoto, Tsukasa Motoya, Shigetoshi Sugawa, Tadahiro Ohmi

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Electrical and physical properties of ErSi_x on n-type Si(100) (111) and (551) surfaces are reported. The ErSi_x density affects the work function of ErSi_x. A controlling the composition ratio of Er and Si is a key parameter for a reducing contact resistance for high performance MISFETs. These silicidation reactions are very important to develop the high current drivability devices using any surface orientation.

Original language	English
Title of host publication	Graphene, Ge/III-V, and Emerging Materials for Post CMOS Applications 5
Pages	343-350
Number of pages	8
Edition	1
DOIs	https://doi.org/10.1149/05301.0343ecst
Publication status	Published - 2013
Event	5th International Symposium on Graphene, Ge/III-V and Emerging Materials For Post-CMOS Applications - 223rd ECS Meeting - Toronto, ON, Canada Duration: 2013 May 12 → 2013 May 17

Publication series

Name	ECS Transactions
Number	1
Volume	53
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Other

Other	5th International Symposium on Graphene, Ge/III-V and Emerging Materials For Post-CMOS Applications - 223rd ECS Meeting
Country/Territory	Canada
City	Toronto, ON
Period	13/5/12 → 13/5/17

ASJC Scopus subject areas

Engineering(all)

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10.1149/05301.0343ecst

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Effect of composition rate on erbium silicide work function on different silicon surface orientation. / Tanaka, Hiroaki; Teramoto, Akinobu; Motoya, Tsukasa et al.

Graphene, Ge/III-V, and Emerging Materials for Post CMOS Applications 5. 1. ed. 2013. p. 343-350 (ECS Transactions; Vol. 53, No. 1).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Tanaka, H, Teramoto, A, Motoya, T, Sugawa, S & Ohmi, T 2013, Effect of composition rate on erbium silicide work function on different silicon surface orientation. in Graphene, Ge/III-V, and Emerging Materials for Post CMOS Applications 5. 1 edn, ECS Transactions, no. 1, vol. 53, pp. 343-350, 5th International Symposium on Graphene, Ge/III-V and Emerging Materials For Post-CMOS Applications - 223rd ECS Meeting, Toronto, ON, Canada, 13/5/12. https://doi.org/10.1149/05301.0343ecst

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Effect of composition rate on erbium silicide work function on different silicon surface orientation

Abstract

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