Abstract
Halide chemical vapor deposition process was carried out for fast fabricating oriented stoichiometric β-SiC through controlling flow rate of precursors (SiCl4 and CH4). The effects of molar ratio of C and Si precursors (RC/Si) on composition, preferred orientation, microstructure and deposition rate (Rdep) were investigated. The deposits transformed from silicon-rich to stoichiometric β-SiC to carbon-rich with increasing RC/Si. 〈110〉-oriented stoichiometric β-SiC with lower density of defects were obtained at RC/Si in the range of 0.86–1.00, where the maximum Rdep was 883 μm/h at RC/Si = 1.00, leading to a thickness of 1.7 mm in 2 h deposition. Formation of ridge-like morphology has been discussed based on a twin plane propagation model.
Original language | English |
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Pages (from-to) | 1217-1223 |
Number of pages | 7 |
Journal | Journal of the European Ceramic Society |
Volume | 37 |
Issue number | 4 |
DOIs | |
Publication status | Published - 2017 Apr 1 |
Keywords
- Composition
- Microstructure
- Molar ratio of C and Si precursors (R)
- Preferred orientation
- β-SiC
ASJC Scopus subject areas
- Ceramics and Composites
- Materials Chemistry