Effect of CH4/SiCl4 ratio on the composition and microstructure of 〈110〉-oriented β-SiC bulks by halide CVD

Rong Tu, Dingheng Zheng, Hong Cheng, Mingwei Hu, Song Zhang, Mingxu Han, Takashi Goto, Lianmeng Zhang

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11 Citations (Scopus)


Halide chemical vapor deposition process was carried out for fast fabricating oriented stoichiometric β-SiC through controlling flow rate of precursors (SiCl4 and CH4). The effects of molar ratio of C and Si precursors (RC/Si) on composition, preferred orientation, microstructure and deposition rate (Rdep) were investigated. The deposits transformed from silicon-rich to stoichiometric β-SiC to carbon-rich with increasing RC/Si. 〈110〉-oriented stoichiometric β-SiC with lower density of defects were obtained at RC/Si in the range of 0.86–1.00, where the maximum Rdep was 883 μm/h at RC/Si = 1.00, leading to a thickness of 1.7 mm in 2 h deposition. Formation of ridge-like morphology has been discussed based on a twin plane propagation model.

Original languageEnglish
Pages (from-to)1217-1223
Number of pages7
JournalJournal of the European Ceramic Society
Issue number4
Publication statusPublished - 2017 Apr 1


  • Composition
  • Microstructure
  • Molar ratio of C and Si precursors (R)
  • Preferred orientation
  • β-SiC

ASJC Scopus subject areas

  • Ceramics and Composites
  • Materials Chemistry

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