Effect of CH4/SiCl4 ratio on the composition and microstructure of 〈110〉-oriented β-SiC bulks by halide CVD

Rong Tu; Dingheng Zheng; Hong Cheng; Mingwei Hu; Song Zhang; Mingxu Han; Takashi Goto; Lianmeng Zhang

doi:10.1016/j.jeurceramsoc.2016.11.015

Effect of CH₄/SiCl₄ ratio on the composition and microstructure of 〈110〉-oriented β-SiC bulks by halide CVD

Rong Tu, Dingheng Zheng, Hong Cheng, Mingwei Hu, Song Zhang, Mingxu Han, Takashi Goto, Lianmeng Zhang

Materials Processing and Characterization Division

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

Halide chemical vapor deposition process was carried out for fast fabricating oriented stoichiometric β-SiC through controlling flow rate of precursors (SiCl₄ and CH₄). The effects of molar ratio of C and Si precursors (R_C/Si) on composition, preferred orientation, microstructure and deposition rate (R_dep) were investigated. The deposits transformed from silicon-rich to stoichiometric β-SiC to carbon-rich with increasing R_C/Si. 〈110〉-oriented stoichiometric β-SiC with lower density of defects were obtained at R_C/Si in the range of 0.86–1.00, where the maximum R_dep was 883 μm/h at R_C/Si = 1.00, leading to a thickness of 1.7 mm in 2 h deposition. Formation of ridge-like morphology has been discussed based on a twin plane propagation model.

Original language	English
Pages (from-to)	1217-1223
Number of pages	7
Journal	Journal of the European Ceramic Society
Volume	37
Issue number	4
DOIs	https://doi.org/10.1016/j.jeurceramsoc.2016.11.015
Publication status	Published - 2017 Apr 1

Keywords

Composition
Microstructure
Molar ratio of C and Si precursors (R)
Preferred orientation
β-SiC

ASJC Scopus subject areas

Ceramics and Composites
Materials Chemistry

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Effect of CH₄/SiCl₄ ratio on the composition and microstructure of 〈110〉-oriented β-SiC bulks by halide CVD. / Tu, Rong; Zheng, Dingheng; Cheng, Hong; Hu, Mingwei; Zhang, Song; Han, Mingxu; Goto, Takashi; Zhang, Lianmeng.

In: Journal of the European Ceramic Society, Vol. 37, No. 4, 01.04.2017, p. 1217-1223.

Research output: Contribution to journal › Article › peer-review

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title = "Effect of CH4/SiCl4 ratio on the composition and microstructure of 〈110〉-oriented β-SiC bulks by halide CVD",

abstract = "Halide chemical vapor deposition process was carried out for fast fabricating oriented stoichiometric β-SiC through controlling flow rate of precursors (SiCl4 and CH4). The effects of molar ratio of C and Si precursors (RC/Si) on composition, preferred orientation, microstructure and deposition rate (Rdep) were investigated. The deposits transformed from silicon-rich to stoichiometric β-SiC to carbon-rich with increasing RC/Si. 〈110〉-oriented stoichiometric β-SiC with lower density of defects were obtained at RC/Si in the range of 0.86–1.00, where the maximum Rdep was 883 μm/h at RC/Si = 1.00, leading to a thickness of 1.7 mm in 2 h deposition. Formation of ridge-like morphology has been discussed based on a twin plane propagation model.",

keywords = "Composition, Microstructure, Molar ratio of C and Si precursors (R), Preferred orientation, β-SiC",

author = "Rong Tu and Dingheng Zheng and Hong Cheng and Mingwei Hu and Song Zhang and Mingxu Han and Takashi Goto and Lianmeng Zhang",

note = "Funding Information: This work was supported by National Natural Science Foundation of China, No. 51102101, No. 51272196, No. 51372188, No. 51521001 and the 111 Project(B13035). This research was also supported by the International Science & Technology Cooperation Program of China (2014DFA53090), the Natural Science Foundation of Hubei Province, China (2014CFB870) and the Fundamental Research Funds for the Central Universities, China (WUT:2015III023, WUT:2016-JL-003). We also acknowledge Ibiden Co. Ltd. for their partially financial support. Publisher Copyright: {\textcopyright} 2016 Elsevier Ltd",

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AU - Zhang, Song

AU - Han, Mingxu

AU - Goto, Takashi

AU - Zhang, Lianmeng

N1 - Funding Information: This work was supported by National Natural Science Foundation of China, No. 51102101, No. 51272196, No. 51372188, No. 51521001 and the 111 Project(B13035). This research was also supported by the International Science & Technology Cooperation Program of China (2014DFA53090), the Natural Science Foundation of Hubei Province, China (2014CFB870) and the Fundamental Research Funds for the Central Universities, China (WUT:2015III023, WUT:2016-JL-003). We also acknowledge Ibiden Co. Ltd. for their partially financial support. Publisher Copyright: © 2016 Elsevier Ltd

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N2 - Halide chemical vapor deposition process was carried out for fast fabricating oriented stoichiometric β-SiC through controlling flow rate of precursors (SiCl4 and CH4). The effects of molar ratio of C and Si precursors (RC/Si) on composition, preferred orientation, microstructure and deposition rate (Rdep) were investigated. The deposits transformed from silicon-rich to stoichiometric β-SiC to carbon-rich with increasing RC/Si. 〈110〉-oriented stoichiometric β-SiC with lower density of defects were obtained at RC/Si in the range of 0.86–1.00, where the maximum Rdep was 883 μm/h at RC/Si = 1.00, leading to a thickness of 1.7 mm in 2 h deposition. Formation of ridge-like morphology has been discussed based on a twin plane propagation model.

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