Abstract
Halide chemical vapor deposition process was carried out for fast fabricating oriented stoichiometric β-SiC through controlling flow rate of precursors (SiCl4 and CH4). The effects of molar ratio of C and Si precursors (RC/Si) on composition, preferred orientation, microstructure and deposition rate (Rdep) were investigated. The deposits transformed from silicon-rich to stoichiometric β-SiC to carbon-rich with increasing RC/Si. 〈110〉-oriented stoichiometric β-SiC with lower density of defects were obtained at RC/Si in the range of 0.86–1.00, where the maximum Rdep was 883 μm/h at RC/Si = 1.00, leading to a thickness of 1.7 mm in 2 h deposition. Formation of ridge-like morphology has been discussed based on a twin plane propagation model.
| Original language | English |
|---|---|
| Pages (from-to) | 1217-1223 |
| Number of pages | 7 |
| Journal | Journal of the European Ceramic Society |
| Volume | 37 |
| Issue number | 4 |
| DOIs | |
| Publication status | Published - 2017 Apr 1 |
Keywords
- Composition
- Microstructure
- Molar ratio of C and Si precursors (R)
- Preferred orientation
- β-SiC
ASJC Scopus subject areas
- Ceramics and Composites
- Materials Chemistry
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Tu, R., Zheng, D., Cheng, H., Hu, M., Zhang, S., Han, M., Goto, T., & Zhang, L. (2017). Effect of CH4/SiCl4 ratio on the composition and microstructure of 〈110〉-oriented β-SiC bulks by halide CVD. Journal of the European Ceramic Society, 37(4), 1217-1223. https://doi.org/10.1016/j.jeurceramsoc.2016.11.015