Effect of Ce doping and oxygen deficiency in Nd2-xCexCuO4-y

S. Uji, H. Aoki

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)

Abstract

Electrical resistivity and magnetoresistance of the as-grown and reduced single crystals of Nd2-xCexCuO4-y have been measured in order to clarify the effect of the Ce doping and the oxygen deficiency on the conduction. The resistivity of the as-grown samples is metallic at high temperatures, but shows tendency toward localization at low temperatures. The as-grown samples without reduction do not show superconductivity. We found that the Ce doping increases the number of the electron carriers and causes the random potential as well. Oxygen deficiency is understood to increase the number of the electron carriers without causing the random potential and raise the Fermi level up to the mobility edge from in the localized states.

Original languageEnglish
Pages (from-to)1537-1538
Number of pages2
JournalPhysica B: Condensed Matter
Volume165-66
Issue number2
Publication statusPublished - 1990 Aug

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

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