Effect of carbon on the thermal stability of a Si atomic layer on Ge(1 0 0)

Masaki Fujiu, Kazuya Takahashi, Masao Sakuraba, Junichi Murota

Research output: Contribution to journalArticlepeer-review

Abstract

Effect of C on the thermal stability of an atomic layer of Si on Ge(1 0 0) was investigated4 during heat treatment between 500 and 700°C. Because of the decrease of the Si coverage and the appearance of Ge hydride are observed after heat treatment at 500-700°C, Si atoms deposited on Ge(1 0 0) tend to diffuse into the Ge layer. It is shown that an atomic layer of C suppresses the Si diffusion into Ge layer and a C containing Si atomic layer on Ge(100) is stable up to 600°C.

Original languageEnglish
Pages (from-to)206-209
Number of pages4
JournalApplied Surface Science
Volume224
Issue number1-4
DOIs
Publication statusPublished - 2004 Mar 15

Keywords

  • Chemical vapor deposition
  • Ge(1 0 0)
  • Si atomic layer
  • SiH
  • SiH CH

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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