Effect of carbon on boron diffusion and clustering in silicon: Temperature dependence study

Y. Tu, Y. Shimizu, Y. Kunimune, Y. Shimada, T. Katayama, T. Ide, M. Inoue, F. Yano, K. Inoue, Y. Nagai

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Abstract

Atom probe tomography and secondary ion mass spectrometry were used to investigate the effects of carbon (C) co-implantation and subsequent annealing at 600 to 1200 °C on the behavior of implanted boron (B) atoms in silicon. When B alone was implanted, annealing at 600 to 800 °C caused it to form clusters in the peak region (1020 cm−3) of the concentration profile, and diffusion only occurred in the low-concentration tail region (<1018 cm−3), which is thought to be the well-known transient enhanced diffusion. However, when co-implantation with C was performed, this diffusion was almost completely suppressed in the same annealing temperature range. In the absence of C implantation, annealing at 1000 °C caused B clusters to begin to dissolve and B to diffuse out of the peak concentration region. However, this diffusion was also suppressed by C implantation because C atoms trapped B atoms in the kink region found at the B concentration level of 2 × 1019 cm−3. At 1200 °C, B clusters were totally dissolved and a strong B diffusion occurred. In contrast to lower annealing temperatures, this diffusion was actually enhanced by C implantation. It is believed that Si interstitials play an important role in the interaction between B and C. This kind of comprehensive investigation yields important information for optimizing ion implantation and annealing processes.

Original languageEnglish
Article number155702
JournalJournal of Applied Physics
Volume124
Issue number15
DOIs
Publication statusPublished - 2018 Oct 21

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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    Tu, Y., Shimizu, Y., Kunimune, Y., Shimada, Y., Katayama, T., Ide, T., Inoue, M., Yano, F., Inoue, K., & Nagai, Y. (2018). Effect of carbon on boron diffusion and clustering in silicon: Temperature dependence study. Journal of Applied Physics, 124(15), [155702]. https://doi.org/10.1063/1.5048313