Effect of c-plane sapphire substrate miscut angle on indium content of MOVPE-grown N-polar InGaN

Kanako Shojiki, Jung Hun Choi, Hirofumi Shindo, Takeshi Kimura, Tomoyuki Tanikawa, Takashi Hanada, Ryuji Katayama, Takashi Matsuoka

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7 Citations (Scopus)


Nitrogen-polar (N-polar) InGaN films were grown on a GaN template/c-plane sapphire substrate by metal-organic vapor phase epitaxy (MOVPE). The effects of c-plane sapphire substrate miscut angle on the indium (In) content and crystal properties of N-polar InGaN films were investigated. The In content increased with increasing miscut angle in the vicinal region of less than 1.1°. This tendency is different from that of group-III-polar InGaN growth because of the difference in the atomic arrangement on the terraces and at step edges between these two inverted polar surfaces. In the case of N-polar growth, a spontaneous two-dimensional nucleation on terraces is difficult and the intentional introduction of steps is effective compared with group-III-polar growth. Furthermore, by observing the surface morphologies of GaN templates in view of both macroscopic and microscopic scales, a clear relationship between the macroscopic surface structure of GaN template and the In content of InGaN was revealed.

Original languageEnglish
Article number05FL07
JournalJapanese journal of applied physics
Issue number5 SPEC. ISSUE 1
Publication statusPublished - 2014 May

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)


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