Effect of Buffer Layer Annealing on the Growth of (001)-Textured MnGa Ultrathin Films with Perpendicular Magnetic Anisotropy

Kazuya Z. Suzuki, Atsuo Ono, Reza Ranjbar, Atsushi Sugihara, Shigemi Mizukami

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

The effect of buffer layer annealing on the growth of (001)-textured 3 nm thick MnGa films with perpendicular magnetic anisotropy (PMA) was investigated. The film stacking of Si/SiO2 substrate/MgO/Cr/CoGa/MnGa was fabricated by magnetron sputtering. It was found that the CoGa buffer layer crystallized with a (001) orientation and B2 chemical ordering even without any thermal treatments. Interestingly, the 3 nm thick MnGa grown on the un-annealed CoGa buffer layer showed PMA, indicating that the CoGa buffer layer promoted the growth of (001)-textured MnGa films with L10 chemical ordering even without the annealing process. Annealing the CoGa buffer layer above 400 °C improved the (001) orientation of the CoGa buffer and MnGa layers. The effective PMA constant K u eff was about 4 Merg/cm3 without the annealing and was slightly reduced with increasing the annealing temperature, whereas the PMA dispersion was improved by the annealing. These results can help to obtain (001)-oriented MnGa ultrathin films with high PMA.

Original languageEnglish
Article number7931579
JournalIEEE Transactions on Magnetics
Volume53
Issue number11
DOIs
Publication statusPublished - 2017 Nov

Keywords

  • Mn-based alloy
  • perpendicular magnetic anisotropy (PMA)
  • ultrathin film

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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