Effect of bias addition on the gap-filling properties of fluorinated amorphous carbon thin films grown by helicon wave plasma-enhanced chemical vapor deposition

Kazuhiko Endo, Toru Tatsumi, Yoshihisa Matsubara

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Gap-filling properties of fluorinated amorphous carbon thin films (a-C:F) for low-dielectric-constant interlayer dielectrics were investigated. The a-C:F films were grown by plasma-enhanced chemical vapor deposition from C4F8. It is demonstrated that by adding 400 kHz bias power to the substrate, the films could fill the gaps without leaving voids. Without bias application, the gap space was not filled. The bias power required to achieve complete gap filling was 30 W. The dielectric constant was 2.5 for the film with bias application.

Original languageEnglish
Pages (from-to)L1348-L1350
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume35
Issue number10 SUPPL. B
DOIs
Publication statusPublished - 1996 Oct 15
Externally publishedYes

Keywords

  • Amorphous
  • Gap-filling
  • Interlayer dielectrics
  • Low-dielectric-constant
  • Plasma-enhanced CVD

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

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