Effect of Ba substitution on the microstructure and electrical conductivity of BaxSr1-xRuO3 thin films prepared by laser ablation

Akihiko Ito, Hiroshi Masumoto, Takashi Goto

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3 Citations (Scopus)

Abstract

BaxSr1-xRuO3 (BSRO) thin films were prepared by laser ablation on quartz substrates at a substrate temperature (Tsub) of 973 K and an oxygen pressure (Po2) of 13 Pa. The effect of Ba substitution for Sr on the microstructure and electrical conductivity (σ) was investigated. (110) -oriented pseudo-cubic BSRO thin films were obtained at a Ba substitution ratio (x) below 0.5. The thin films prepared at x = 0.6 to 0.8 had the 4H-type BaRuO3 (BRO) structure, whereas 9R BRO thin films were obtained at x = 1.0. The BSRO thin films consisted of well-crystallized fine grains. The pseudo-cubic lattice parameter of the BSRO thin films increased linearly from 0.393 to 0.407 with increasing x. The BSRO thin films showed metallic conduction, and the σ decreased due to lattice expansion with increasing χ.

Original languageEnglish
Pages (from-to)441-444
Number of pages4
JournalJournal of the Ceramic Society of Japan
Volume116
Issue number1351
DOIs
Publication statusPublished - 2008 Mar

Keywords

  • Barium ruthenate
  • Electricalconductivity
  • Laser ablation
  • Microstiucture
  • Strontium ruthenate
  • Substitution effect
  • Thin films

ASJC Scopus subject areas

  • Ceramics and Composites
  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

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