Effect of Ar-gas-pressure on oxygen content of Co-Si-O granular film sputter-deposited by using sintered targets

S. Sasaki, S. Saito, Migaku Takahashi

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1 Citation (Scopus)

Abstract

A systematic study of the effect of Ar-gas-pressure (PAr) in Co-Si-O granular film by sputter deposition using sintered targets is carried out for applications in CoPtCr-SiO2 perpendicular media. Detailed analyses of composition, phase formation and microstructure of granular films revealed that: (1) Co-Si-O granular films with similar compositions could be prepared by different sintered targets, (Co)+(SiO2), (Co)+(CoSi)+(CoO), (Co)+(Si)+(CoO), and (Co)+(Si)+(Co3O4), (2) oxygen content in film increases with increasing PAr, (3) oxygen content in film could be adjustable by the target composition (e.g. (CoO)/(CoSi)). Taking these results into account, we tried low PAr deposition of Co-Si-O granular film. Under PAr 0.6 Pa, oxygen-poor Co-Si-O granular film was obtained using a conventional (Co)+(SiO2) target, while by using a new type of sintered (Co)+(CoSi)+enriched(CoO) target, the oxygen composition in the granular film could be adjusted to be O/Si= 2 with grain isolated structure.

Original languageEnglish
Article number012062
JournalJournal of Physics: Conference Series
Volume266
Issue number1
DOIs
Publication statusPublished - 2011 Jan 1

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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