Effect of annealing temperature on multiferroic properties of Bi 0.85Nd0.15FeO3 thin films prepared by sol-gel method

Dongyun Guo, Chao Li, Chuanbin Wang, Qiang Shen, Lianmeng Zhang, Rong Tu, Takashi Goto

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)


Bi0.85Nd0.15FeO3 films were prepared on Pt/Ti/SiO2/Si substrate by a sol-gel method, and annealed at different temperatures. The effect of annealing temperature on the crystal structure, dielectric, ferroelectric, and ferromagnetic properties was investigated. When the Bi0.85Nd0.15FeO3 films were annealed at 490-600°C, the single phase was obtained. Bi 0.85Nd0.15FeO3 film annealed at 600°C showed good multiferroic properties with εr of 145 (at 1 MHz), Ms of 44.8 emu/cm3, and 2Pr of 16.6 μC/cm2.

Original languageEnglish
Pages (from-to)1572-1575
Number of pages4
JournalScience China Technological Sciences
Issue number6
Publication statusPublished - 2010 Jun


  • Annealing temperature
  • BiNdFeO thin films
  • Ferroelectric properties
  • Ferromagnetic properties
  • Sol-gel method

ASJC Scopus subject areas

  • Materials Science(all)
  • Engineering(all)


Dive into the research topics of 'Effect of annealing temperature on multiferroic properties of Bi <sub>0.85</sub>Nd<sub>0.15</sub>FeO<sub>3</sub> thin films prepared by sol-gel method'. Together they form a unique fingerprint.

Cite this