Effect of annealing on implanted Ga of diamond-like carbon thin films fabricated by focused-ion-beam chemical vapor deposition

Takahiro Nagata, Yoshiki Sakuma, Masamitsu Haemori, Kiyomi Nakajima, Reo Kometani, Kazuhiro Kanda, Shinji Matsui, Toyohiro Chikyow

Research output: Contribution to journalArticlepeer-review

9 Citations (Scopus)

Abstract

The effect of annealing on implanted Ga of diamond-like carbon (DLC) films on Si substrates fabricated by focused-ion-beam chemical vapor deposition (FIB-CVD) was investigated. Thermal desorption spectroscopy showed two Ga + peaks at 470 and 630°C. These temperatures agree with the results of energy-dispersive X-ray diffraction analysis of Ga concentration in the film. Cross-sectional transmission microscopy revealed changes in the structure of the DLC film at each temperature. At approximately 400 °C, the Ga in the film migrated to the surface and desorbed. Above 600 °C, the Si in the DLC layer near the damaged Si substrate interface recrystallized. These results can be applied to enable deliberate control of the mechanical properties of DLC films fabricated by FIB-CVD.

Original languageEnglish
Pages (from-to)9010-9012
Number of pages3
JournalJapanese journal of applied physics
Volume47
Issue number12
DOIs
Publication statusPublished - 2008 Dec 19
Externally publishedYes

Keywords

  • Diamond-like carbon
  • Focused-ion-beam chemical vapor deposition (FIB-CVD)
  • Thermal desorption spectroscopy

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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