TY - JOUR
T1 - Effect of annealing on implanted Ga of diamond-like carbon thin films fabricated by focused-ion-beam chemical vapor deposition
AU - Nagata, Takahiro
AU - Sakuma, Yoshiki
AU - Haemori, Masamitsu
AU - Nakajima, Kiyomi
AU - Kometani, Reo
AU - Kanda, Kazuhiro
AU - Matsui, Shinji
AU - Chikyow, Toyohiro
PY - 2008/12/19
Y1 - 2008/12/19
N2 - The effect of annealing on implanted Ga of diamond-like carbon (DLC) films on Si substrates fabricated by focused-ion-beam chemical vapor deposition (FIB-CVD) was investigated. Thermal desorption spectroscopy showed two Ga + peaks at 470 and 630°C. These temperatures agree with the results of energy-dispersive X-ray diffraction analysis of Ga concentration in the film. Cross-sectional transmission microscopy revealed changes in the structure of the DLC film at each temperature. At approximately 400 °C, the Ga in the film migrated to the surface and desorbed. Above 600 °C, the Si in the DLC layer near the damaged Si substrate interface recrystallized. These results can be applied to enable deliberate control of the mechanical properties of DLC films fabricated by FIB-CVD.
AB - The effect of annealing on implanted Ga of diamond-like carbon (DLC) films on Si substrates fabricated by focused-ion-beam chemical vapor deposition (FIB-CVD) was investigated. Thermal desorption spectroscopy showed two Ga + peaks at 470 and 630°C. These temperatures agree with the results of energy-dispersive X-ray diffraction analysis of Ga concentration in the film. Cross-sectional transmission microscopy revealed changes in the structure of the DLC film at each temperature. At approximately 400 °C, the Ga in the film migrated to the surface and desorbed. Above 600 °C, the Si in the DLC layer near the damaged Si substrate interface recrystallized. These results can be applied to enable deliberate control of the mechanical properties of DLC films fabricated by FIB-CVD.
KW - Diamond-like carbon
KW - Focused-ion-beam chemical vapor deposition (FIB-CVD)
KW - Thermal desorption spectroscopy
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U2 - 10.1143/JJAP.47.9010
DO - 10.1143/JJAP.47.9010
M3 - Article
AN - SCOPUS:59349093382
VL - 47
SP - 9010
EP - 9012
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 12
ER -