Effect of anion-to-cation supplying ratio on the surface morphology of AlN films grown on ZnO substrates at low temperature

Inho Im, Mina Jung, Jieun Koo, Hyunjae Lee, Jinsub Park, Tsutomu Minegishi, Seunghwan Park, Katsushi Fujii, Takafumi Yao, Gyungsuk Kil, Takashi Hanada, Jiho Chang

Research output: Contribution to journalArticlepeer-review

Abstract

The authors investigated the evolution of surface morphology of AlN films grown on ZnO substrates at low temperature (LT) (400 °C) as a function of anion/cation supplying ratio (V/III ratio). Unlike the well-known favorable growth conditions for high-temperature growth, smooth-surface LT-AlN layers were obtained under the O-polar surface, stoichiometric, and N-rich conditions. LT-AlN layers revealed smooth surface (roughness in root mean square=0.20 nm for AlN on O-polar ZnO and 0.44 nm for AlN on Zn-polar ZnO) and quite low etch-pit density (∼2× 106 cm-2 for AlN/Zn -polar ZnO).

Original languageEnglish
Pages (from-to)61-64
Number of pages4
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume28
Issue number1
DOIs
Publication statusPublished - 2010

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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