Effect of anion-to-cation supplying ratio on the surface morphology of AlN films grown on ZnO substrates at low temperature

Inho Im; Mina Jung; Jieun Koo; Hyunjae Lee; Jinsub Park; Tsutomu Minegishi; Seunghwan Park; Katsushi Fujii; Takafumi Yao; Gyungsuk Kil; Takashi Hanada; Jiho Chang

doi:10.1116/1.3264479

Effect of anion-to-cation supplying ratio on the surface morphology of AlN films grown on ZnO substrates at low temperature

Inho Im, Mina Jung, Jieun Koo, Hyunjae Lee, Jinsub Park, Tsutomu Minegishi, Seunghwan Park, Katsushi Fujii, Takafumi Yao, Gyungsuk Kil, Takashi Hanada, Jiho Chang

Materials Design Division

Research output: Contribution to journal › Article › peer-review

Abstract

The authors investigated the evolution of surface morphology of AlN films grown on ZnO substrates at low temperature (LT) (400 °C) as a function of anion/cation supplying ratio (V/III ratio). Unlike the well-known favorable growth conditions for high-temperature growth, smooth-surface LT-AlN layers were obtained under the O-polar surface, stoichiometric, and N-rich conditions. LT-AlN layers revealed smooth surface (roughness in root mean square=0.20 nm for AlN on O-polar ZnO and 0.44 nm for AlN on Zn-polar ZnO) and quite low etch-pit density (∼2× 10⁶ cm^-2 for AlN/Zn -polar ZnO).

Original language	English
Pages (from-to)	61-64
Number of pages	4
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	28
Issue number	1
DOIs	https://doi.org/10.1116/1.3264479
Publication status	Published - 2010

ASJC Scopus subject areas

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films

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Im, I., Jung, M., Koo, J., Lee, H., Park, J., Minegishi, T., Park, S., Fujii, K., Yao, T., Kil, G., Hanada, T., & Chang, J. (2010). Effect of anion-to-cation supplying ratio on the surface morphology of AlN films grown on ZnO substrates at low temperature. Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, 28(1), 61-64. https://doi.org/10.1116/1.3264479

Effect of anion-to-cation supplying ratio on the surface morphology of AlN films grown on ZnO substrates at low temperature. / Im, Inho; Jung, Mina; Koo, Jieun; Lee, Hyunjae; Park, Jinsub; Minegishi, Tsutomu; Park, Seunghwan; Fujii, Katsushi; Yao, Takafumi; Kil, Gyungsuk; Hanada, Takashi; Chang, Jiho.

In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vol. 28, No. 1, 2010, p. 61-64.

Research output: Contribution to journal › Article › peer-review

Im, I, Jung, M, Koo, J, Lee, H, Park, J, Minegishi, T, Park, S, Fujii, K, Yao, T, Kil, G, Hanada, T & Chang, J 2010, 'Effect of anion-to-cation supplying ratio on the surface morphology of AlN films grown on ZnO substrates at low temperature', Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, vol. 28, no. 1, pp. 61-64. https://doi.org/10.1116/1.3264479

Im, Inho ; Jung, Mina ; Koo, Jieun ; Lee, Hyunjae ; Park, Jinsub ; Minegishi, Tsutomu ; Park, Seunghwan ; Fujii, Katsushi ; Yao, Takafumi ; Kil, Gyungsuk ; Hanada, Takashi ; Chang, Jiho. / Effect of anion-to-cation supplying ratio on the surface morphology of AlN films grown on ZnO substrates at low temperature. In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films. 2010 ; Vol. 28, No. 1. pp. 61-64.

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title = "Effect of anion-to-cation supplying ratio on the surface morphology of AlN films grown on ZnO substrates at low temperature",

abstract = "The authors investigated the evolution of surface morphology of AlN films grown on ZnO substrates at low temperature (LT) (400 °C) as a function of anion/cation supplying ratio (V/III ratio). Unlike the well-known favorable growth conditions for high-temperature growth, smooth-surface LT-AlN layers were obtained under the O-polar surface, stoichiometric, and N-rich conditions. LT-AlN layers revealed smooth surface (roughness in root mean square=0.20 nm for AlN on O-polar ZnO and 0.44 nm for AlN on Zn-polar ZnO) and quite low etch-pit density (∼2× 106 cm-2 for AlN/Zn -polar ZnO).",

author = "Inho Im and Mina Jung and Jieun Koo and Hyunjae Lee and Jinsub Park and Tsutomu Minegishi and Seunghwan Park and Katsushi Fujii and Takafumi Yao and Gyungsuk Kil and Takashi Hanada and Jiho Chang",

note = "Funding Information: This research was supported by the MKE (The Ministry of Knowledge Economy), Korea, under the ITRC (Information Technology Research Center) support program supervised by the IITA (Institute for Information Technology Advancement) (IITA-2009-C1090-0903-0007). ",

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AU - Im, Inho

AU - Jung, Mina

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AU - Park, Jinsub

AU - Minegishi, Tsutomu

AU - Park, Seunghwan

AU - Fujii, Katsushi

AU - Yao, Takafumi

AU - Kil, Gyungsuk

AU - Hanada, Takashi

AU - Chang, Jiho

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PY - 2010

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