The authors investigated the evolution of surface morphology of AlN films grown on ZnO substrates at low temperature (LT) (400 °C) as a function of anion/cation supplying ratio (V/III ratio). Unlike the well-known favorable growth conditions for high-temperature growth, smooth-surface LT-AlN layers were obtained under the O-polar surface, stoichiometric, and N-rich conditions. LT-AlN layers revealed smooth surface (roughness in root mean square=0.20 nm for AlN on O-polar ZnO and 0.44 nm for AlN on Zn-polar ZnO) and quite low etch-pit density (∼2× 106 cm-2 for AlN/Zn -polar ZnO).
|Number of pages||4|
|Journal||Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films|
|Publication status||Published - 2010|
ASJC Scopus subject areas
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films