Effect of an InP/In 0.53Ga 0.47As interface on spin-orbit interaction in In 0.52Al 0.48As/In 0.53Ga 0.47As heterostructures

Yiping Lin, Takaaki Koga, Junsaku Nitta

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34 Citations (Scopus)


We report the effect of the insertion of an InP/In 0.53Ga 47As Interface on the Rashba spin-orbit interaction in In 0.52Al 0.48As/In 0.53Ga 0.47As quantum wells. A small spin split-off energy in InP produces a very intriguing band lineup in the valence bands in this system. With or without this InP layer above the In 0.53Ga 47As well, the overall values of the spin-orbit coupling constant α turned out to be enhanced or diminished for samples with the front- or back-doping position, respectively. These experimental results, using weak antilocalization analysis, are compared with the results of the k·p theory. The actual conditions of the interfaces and materials should account for the quantitative difference in magnitude between the measurements and calculations.

Original languageEnglish
Article number045328
JournalPhysical Review B - Condensed Matter and Materials Physics
Issue number4
Publication statusPublished - 2005 Jan
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


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