Effect of ALD-Al2O3 Passivated Silicon Quantum Dot Superlattices on p/i/n+ Solar Cells

Mohammad Maksudur Rahman; Yi Chia Tsai; Ming Yi Lee; Akio Higo; Yiming Li; Yusuke Hoshi; Noritaka Usami; Seiji Samukawa

doi:10.1109/TED.2017.2704294

Effect of ALD-Al₂O₃ Passivated Silicon Quantum Dot Superlattices on p/i/n⁺ Solar Cells

Mohammad Maksudur Rahman, Yi Chia Tsai, Ming Yi Lee, Akio Higo, Yiming Li, Yusuke Hoshi, Noritaka Usami, Seiji Samukawa

Innovative Energy Research Center

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

The photovoltaic (PV) nature of the silicon (Si) quantum dot super lattice (QDSL) is studied with an atomiclayer-deposited aluminum oxide film (ALD-Al₂O₃) and a conventional sputtered-grown amorphous silicon carbide film (a-SiC). The QDSL structures act as an intermediate layer in a p/i/n+ Si solar cell. The QDSL consists of 4-nm Si on 2-nm SiC nanodisks (NDs) arrayed in an ALD-Al₂O₃ and a-SiC passivation matrix. Formation of Si-NDs was confirmed by bright field scanning transmission electron microscope. A significant PV response in generating a high photocurrent density J_sc of 30.15mA/cm²open circuit voltage V_oc of 0.50 V, fill factor FF of 0.61, and efficiency η of 9.12% was observed in ALD-Al2O3/QDSL solar cell with respect to a-SiC/QDSL solar cell with J_sc of 26.94 mA/cm2, V_oc of 0.50 V, FF of 0.47, and ? of 6.42%. A wide range of photo-carrier transports by the ALD-Al2O3/QDSL structure is possible in the external quantum efficiency spectra with respect to a-SiC/QDSL solar cell. The enhanced PV performance of the QD solar cells was clarified in terms of simulating the absorption contributions for all possible transitions in the nanostructure with different passivation films.

Original language	English
Article number	7935526
Pages (from-to)	2886-2892
Number of pages	7
Journal	IEEE Transactions on Electron Devices
Volume	64
Issue number	7
DOIs	https://doi.org/10.1109/TED.2017.2704294
Publication status	Published - 2017 Jul

Keywords

Passivation
Si/SiC heterostructure
silicon quantum dot super lattice (Si QDSL)
solar cell

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/TED.2017.2704294

Fingerprint Dive into the research topics of 'Effect of ALD-Al2O3 Passivated Silicon Quantum Dot Superlattices on p/i/n+ Solar Cells'. Together they form a unique fingerprint.

Cite this

Effect of ALD-Al₂O₃ Passivated Silicon Quantum Dot Superlattices on p/i/n⁺ Solar Cells. / Rahman, Mohammad Maksudur; Tsai, Yi Chia; Lee, Ming Yi; Higo, Akio; Li, Yiming; Hoshi, Yusuke; Usami, Noritaka; Samukawa, Seiji.

In: IEEE Transactions on Electron Devices, Vol. 64, No. 7, 7935526, 07.2017, p. 2886-2892.

Research output: Contribution to journal › Article › peer-review

@article{92c1fa735bf5402a93de922fddc9e009,

title = "Effect of ALD-Al2O3 Passivated Silicon Quantum Dot Superlattices on p/i/n+ Solar Cells",

abstract = "The photovoltaic (PV) nature of the silicon (Si) quantum dot super lattice (QDSL) is studied with an atomiclayer-deposited aluminum oxide film (ALD-Al2O3) and a conventional sputtered-grown amorphous silicon carbide film (a-SiC). The QDSL structures act as an intermediate layer in a p/i/n+ Si solar cell. The QDSL consists of 4-nm Si on 2-nm SiC nanodisks (NDs) arrayed in an ALD-Al2O3 and a-SiC passivation matrix. Formation of Si-NDs was confirmed by bright field scanning transmission electron microscope. A significant PV response in generating a high photocurrent density Jsc of 30.15mA/cm2open circuit voltage Voc of 0.50 V, fill factor FF of 0.61, and efficiency η of 9.12% was observed in ALD-Al2O3/QDSL solar cell with respect to a-SiC/QDSL solar cell with Jsc of 26.94 mA/cm2, Voc of 0.50 V, FF of 0.47, and ? of 6.42%. A wide range of photo-carrier transports by the ALD-Al2O3/QDSL structure is possible in the external quantum efficiency spectra with respect to a-SiC/QDSL solar cell. The enhanced PV performance of the QD solar cells was clarified in terms of simulating the absorption contributions for all possible transitions in the nanostructure with different passivation films.",

keywords = "Passivation, Si/SiC heterostructure, silicon quantum dot super lattice (Si QDSL), solar cell",

author = "Rahman, {Mohammad Maksudur} and Tsai, {Yi Chia} and Lee, {Ming Yi} and Akio Higo and Yiming Li and Yusuke Hoshi and Noritaka Usami and Seiji Samukawa",

year = "2017",

month = jul,

doi = "10.1109/TED.2017.2704294",

language = "English",

volume = "64",

pages = "2886--2892",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "7",

}

TY - JOUR

T1 - Effect of ALD-Al2O3 Passivated Silicon Quantum Dot Superlattices on p/i/n+ Solar Cells

AU - Rahman, Mohammad Maksudur

AU - Tsai, Yi Chia

AU - Lee, Ming Yi

AU - Higo, Akio

AU - Li, Yiming

AU - Hoshi, Yusuke

AU - Usami, Noritaka

AU - Samukawa, Seiji

PY - 2017/7

Y1 - 2017/7

N2 - The photovoltaic (PV) nature of the silicon (Si) quantum dot super lattice (QDSL) is studied with an atomiclayer-deposited aluminum oxide film (ALD-Al2O3) and a conventional sputtered-grown amorphous silicon carbide film (a-SiC). The QDSL structures act as an intermediate layer in a p/i/n+ Si solar cell. The QDSL consists of 4-nm Si on 2-nm SiC nanodisks (NDs) arrayed in an ALD-Al2O3 and a-SiC passivation matrix. Formation of Si-NDs was confirmed by bright field scanning transmission electron microscope. A significant PV response in generating a high photocurrent density Jsc of 30.15mA/cm2open circuit voltage Voc of 0.50 V, fill factor FF of 0.61, and efficiency η of 9.12% was observed in ALD-Al2O3/QDSL solar cell with respect to a-SiC/QDSL solar cell with Jsc of 26.94 mA/cm2, Voc of 0.50 V, FF of 0.47, and ? of 6.42%. A wide range of photo-carrier transports by the ALD-Al2O3/QDSL structure is possible in the external quantum efficiency spectra with respect to a-SiC/QDSL solar cell. The enhanced PV performance of the QD solar cells was clarified in terms of simulating the absorption contributions for all possible transitions in the nanostructure with different passivation films.

AB - The photovoltaic (PV) nature of the silicon (Si) quantum dot super lattice (QDSL) is studied with an atomiclayer-deposited aluminum oxide film (ALD-Al2O3) and a conventional sputtered-grown amorphous silicon carbide film (a-SiC). The QDSL structures act as an intermediate layer in a p/i/n+ Si solar cell. The QDSL consists of 4-nm Si on 2-nm SiC nanodisks (NDs) arrayed in an ALD-Al2O3 and a-SiC passivation matrix. Formation of Si-NDs was confirmed by bright field scanning transmission electron microscope. A significant PV response in generating a high photocurrent density Jsc of 30.15mA/cm2open circuit voltage Voc of 0.50 V, fill factor FF of 0.61, and efficiency η of 9.12% was observed in ALD-Al2O3/QDSL solar cell with respect to a-SiC/QDSL solar cell with Jsc of 26.94 mA/cm2, Voc of 0.50 V, FF of 0.47, and ? of 6.42%. A wide range of photo-carrier transports by the ALD-Al2O3/QDSL structure is possible in the external quantum efficiency spectra with respect to a-SiC/QDSL solar cell. The enhanced PV performance of the QD solar cells was clarified in terms of simulating the absorption contributions for all possible transitions in the nanostructure with different passivation films.

KW - Passivation

KW - Si/SiC heterostructure

KW - silicon quantum dot super lattice (Si QDSL)

KW - solar cell

UR - http://www.scopus.com/inward/record.url?scp=85028306896&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85028306896&partnerID=8YFLogxK

U2 - 10.1109/TED.2017.2704294

DO - 10.1109/TED.2017.2704294

M3 - Article

AN - SCOPUS:85028306896

VL - 64

SP - 2886

EP - 2892

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

SN - 0018-9383

IS - 7

M1 - 7935526

ER -