Abstract
Effects of Al-concentration on growth of antiphase domains (APDs) in Ti3Al crystals have been investigated using crystals with stoichiometric (Ti-25at.%Al) and Al-rich (Ti-33at.%Al) compositions in the temperature range from 973K to 1173K. The growth rate of APDs in the Al-rich crystal is several times higher than that in the stoichiometric crystals at all the temperatures investigated. While the time dependence of APD size obeys the parabolic-growth-law in the stoichiometric crystal, negative deviations from the law takes place at the late stage of the APD growth in the Al-rich crystal owing to the pinning effect of low energy APB boundaries. APD boundaries lying on prism planes are formed in the Al-rich crystal annealed at 973K.
Original language | English |
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Pages (from-to) | 217-222 |
Number of pages | 6 |
Journal | Materials Research Society Symposium - Proceedings |
Volume | 705 |
Publication status | Published - 2002 Jan 1 |
Event | Nanopatterning-Form ultralarge-Scale Integration to Biotechnology - Boston, MA, United States Duration: 2001 Nov 25 → 2001 Nov 29 |
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering