Effect of Al concentration on growth of antiphase domains in Ti3Al

Yuichiro Koizumi; H. Katsumura; Y. Minamino; N. Tsuji

Effect of Al concentration on growth of antiphase domains in Ti₃Al

Yuichiro Koizumi, H. Katsumura, Y. Minamino, N. Tsuji

Materials Processing and Characterization Division

Research output: Contribution to journal › Conference article › peer-review

1 Citation (Scopus)

Abstract

Effects of Al-concentration on growth of antiphase domains (APDs) in Ti₃Al crystals have been investigated using crystals with stoichiometric (Ti-25at.%Al) and Al-rich (Ti-33at.%Al) compositions in the temperature range from 973K to 1173K. The growth rate of APDs in the Al-rich crystal is several times higher than that in the stoichiometric crystals at all the temperatures investigated. While the time dependence of APD size obeys the parabolic-growth-law in the stoichiometric crystal, negative deviations from the law takes place at the late stage of the APD growth in the Al-rich crystal owing to the pinning effect of low energy APB boundaries. APD boundaries lying on prism planes are formed in the Al-rich crystal annealed at 973K.

Original language	English
Pages (from-to)	217-222
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	705
Publication status	Published - 2002 Jan 1
Event	Nanopatterning-Form ultralarge-Scale Integration to Biotechnology - Boston, MA, United States Duration: 2001 Nov 25 → 2001 Nov 29

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

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title = "Effect of Al concentration on growth of antiphase domains in Ti3Al",

abstract = "Effects of Al-concentration on growth of antiphase domains (APDs) in Ti3Al crystals have been investigated using crystals with stoichiometric (Ti-25at.%Al) and Al-rich (Ti-33at.%Al) compositions in the temperature range from 973K to 1173K. The growth rate of APDs in the Al-rich crystal is several times higher than that in the stoichiometric crystals at all the temperatures investigated. While the time dependence of APD size obeys the parabolic-growth-law in the stoichiometric crystal, negative deviations from the law takes place at the late stage of the APD growth in the Al-rich crystal owing to the pinning effect of low energy APB boundaries. APD boundaries lying on prism planes are formed in the Al-rich crystal annealed at 973K.",

author = "Yuichiro Koizumi and H. Katsumura and Y. Minamino and N. Tsuji",

year = "2002",

month = jan,

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language = "English",

volume = "705",

pages = "217--222",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Nanopatterning-Form ultralarge-Scale Integration to Biotechnology ; Conference date: 25-11-2001 Through 29-11-2001",

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TY - JOUR

T1 - Effect of Al concentration on growth of antiphase domains in Ti3Al

AU - Koizumi, Yuichiro

AU - Katsumura, H.

AU - Minamino, Y.

AU - Tsuji, N.

PY - 2002/1/1

Y1 - 2002/1/1

N2 - Effects of Al-concentration on growth of antiphase domains (APDs) in Ti3Al crystals have been investigated using crystals with stoichiometric (Ti-25at.%Al) and Al-rich (Ti-33at.%Al) compositions in the temperature range from 973K to 1173K. The growth rate of APDs in the Al-rich crystal is several times higher than that in the stoichiometric crystals at all the temperatures investigated. While the time dependence of APD size obeys the parabolic-growth-law in the stoichiometric crystal, negative deviations from the law takes place at the late stage of the APD growth in the Al-rich crystal owing to the pinning effect of low energy APB boundaries. APD boundaries lying on prism planes are formed in the Al-rich crystal annealed at 973K.

AB - Effects of Al-concentration on growth of antiphase domains (APDs) in Ti3Al crystals have been investigated using crystals with stoichiometric (Ti-25at.%Al) and Al-rich (Ti-33at.%Al) compositions in the temperature range from 973K to 1173K. The growth rate of APDs in the Al-rich crystal is several times higher than that in the stoichiometric crystals at all the temperatures investigated. While the time dependence of APD size obeys the parabolic-growth-law in the stoichiometric crystal, negative deviations from the law takes place at the late stage of the APD growth in the Al-rich crystal owing to the pinning effect of low energy APB boundaries. APD boundaries lying on prism planes are formed in the Al-rich crystal annealed at 973K.

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M3 - Conference article

AN - SCOPUS:0036350758

VL - 705

SP - 217

EP - 222

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

SN - 0272-9172

T2 - Nanopatterning-Form ultralarge-Scale Integration to Biotechnology

Y2 - 25 November 2001 through 29 November 2001

ER -

Effect of Al concentration on growth of antiphase domains in Ti₃Al

Abstract

ASJC Scopus subject areas

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