Effect of Al concentration on growth of antiphase domains in Ti3Al

Yuichiro Koizumi, H. Katsumura, Y. Minamino, N. Tsuji

Research output: Contribution to journalConference articlepeer-review

1 Citation (Scopus)

Abstract

Effects of Al-concentration on growth of antiphase domains (APDs) in Ti3Al crystals have been investigated using crystals with stoichiometric (Ti-25at.%Al) and Al-rich (Ti-33at.%Al) compositions in the temperature range from 973K to 1173K. The growth rate of APDs in the Al-rich crystal is several times higher than that in the stoichiometric crystals at all the temperatures investigated. While the time dependence of APD size obeys the parabolic-growth-law in the stoichiometric crystal, negative deviations from the law takes place at the late stage of the APD growth in the Al-rich crystal owing to the pinning effect of low energy APB boundaries. APD boundaries lying on prism planes are formed in the Al-rich crystal annealed at 973K.

Original languageEnglish
Pages (from-to)217-222
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume705
Publication statusPublished - 2002 Jan 1
EventNanopatterning-Form ultralarge-Scale Integration to Biotechnology - Boston, MA, United States
Duration: 2001 Nov 252001 Nov 29

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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