Effect of adding Te to layered GaSe crystals to increase the van der Waals bonding force

Tadao Tanabe, Shu Zhao, Yohei Sato, Yutaka Oyama

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

The interplanar binding strength of layered GaSe1-xTex crystals was directly measured using a tensile testing machine. The GaSe1-xTex crystals were grown by a low temperature liquid phase solution method under a controlled Se vapor pressure. The stoichiometry-controlled GaSe1-xTex crystal has the ϵ-polytype structure of GaSe, where the Te atoms are substituted for some of the Se atoms in the GaSe crystal. The effect of adding Te on the bonding strength between the GaSe layers was determined from direct measurements of the van der Waals bonding energy. The bonding energy was increased from 0.023 × 106 N/m2 for GaSe to 0.16 × 106 N/m2 for GaSe1-xTex (x = 0.106).

Original languageEnglish
Article number165105
JournalJournal of Applied Physics
Volume122
Issue number16
DOIs
Publication statusPublished - 2017 Oct 28

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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