Effect of a radiation shield on silicon cz growth

Takao Tsukada, Nobuyuki Imaishi, Mitsunori Hozawa, Katsuhiko Fujinawa

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

For silicon CZ crystal growth, the effect of inserting a radiation shield into the furnace on the temperature profile in the melt and crystal and on the shape of the melt/crystal interface was studied theoretically by use of finite element analysis based on the conduction-dominated model. It was found that inserting a radiation shield makes the interface shape less convex to the crystal in comparison with that without the shield except for the initial stage. Also, with use of a short radiation shield there is a possibility of obtaining a higher pull rate because the temperature gradient near the interface becomes steeper than that without the shield.

Original languageEnglish
Pages (from-to)146-151
Number of pages6
JournalJOURNAL of CHEMICAL ENGINEERING of JAPAN
Volume20
Issue number2
DOIs
Publication statusPublished - 1987 Jan 1

Keywords

  • Crystal Growth
  • Czochralski Method
  • Finite Element Method
  • Heat Conduction
  • Interface Shape
  • Numerical Simulation
  • Radiation Shield
  • Silicon

ASJC Scopus subject areas

  • Chemistry(all)
  • Chemical Engineering(all)

Fingerprint Dive into the research topics of 'Effect of a radiation shield on silicon cz growth'. Together they form a unique fingerprint.

  • Cite this