TY - JOUR
T1 - Effect of a coincident Pb flux during mbe growth on the electrical properties of GaAs and AlGaAs layers
AU - Akatsu, Y.
AU - Ohno, H.
AU - Hasegawa, H.
AU - Hashizume, T.
N1 - Funding Information:
The authors would like to thank Dr. T. Sawada for the electrochemical technique and for fruitful discussion. This work was supported partly by a Grant-in-Aid for Scientific Research from the Ministry of Education, Science and Culture, Japan.
PY - 1987/2/2
Y1 - 1987/2/2
N2 - The effect of a coincident Pb flux during molecular beam epitaxial growth on the electrical properties of undoped GaAs and Si doped AlxGa1-xAs layers is investigated. In undoped GaAs, the concentration of electron trap is decreased with the Pb flux. In the case of Si doped AlxGa1-xAs, the Pb flux is shown to reduce the incorporation rate constant of Si. From the carrier concentration profile, the incorporation rate constant of Si for AiGaAs both with and without Pb flux are determined for the first time.
AB - The effect of a coincident Pb flux during molecular beam epitaxial growth on the electrical properties of undoped GaAs and Si doped AlxGa1-xAs layers is investigated. In undoped GaAs, the concentration of electron trap is decreased with the Pb flux. In the case of Si doped AlxGa1-xAs, the Pb flux is shown to reduce the incorporation rate constant of Si. From the carrier concentration profile, the incorporation rate constant of Si for AiGaAs both with and without Pb flux are determined for the first time.
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U2 - 10.1016/0022-0248(87)90411-8
DO - 10.1016/0022-0248(87)90411-8
M3 - Article
AN - SCOPUS:0022669933
VL - 81
SP - 319
EP - 325
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
IS - 1-4
ER -