Abstract
The effect of a coincident Pb flux during molecular beam epitaxial growth on the electrical properties of undoped GaAs and Si doped AlxGa1-xAs layers is investigated. In undoped GaAs, the concentration of electron trap is decreased with the Pb flux. In the case of Si doped AlxGa1-xAs, the Pb flux is shown to reduce the incorporation rate constant of Si. From the carrier concentration profile, the incorporation rate constant of Si for AiGaAs both with and without Pb flux are determined for the first time.
| Original language | English |
|---|---|
| Pages (from-to) | 319-325 |
| Number of pages | 7 |
| Journal | Journal of Crystal Growth |
| Volume | 81 |
| Issue number | 1-4 |
| DOIs | |
| Publication status | Published - 1987 Feb 2 |
| Externally published | Yes |
ASJC Scopus subject areas
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry
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Akatsu, Y., Ohno, H., Hasegawa, H., & Hashizume, T. (1987). Effect of a coincident Pb flux during mbe growth on the electrical properties of GaAs and AlGaAs layers. Journal of Crystal Growth, 81(1-4), 319-325. https://doi.org/10.1016/0022-0248(87)90411-8