Effect of 30 MeV Li3+ ion and 8MeV electron irradiation on N-channel MOSFETs

A. P. Gnana Prakash; K. C. Prashanth Ganesh; Y. N. Nagesha; D. Umakanth; S. K. Arora; K. Siddappa

doi:10.1080/10420150213002

Effect of 30 MeV Li³⁺ ion and 8MeV electron irradiation on N-channel MOSFETs

A. P. Gnana Prakash, K. C. Prashanth Ganesh, Y. N. Nagesha, D. Umakanth, S. K. Arora, K. Siddappa

Cyclotron and Radioisotope Center (CYRIC)

Research output: Contribution to journal › Article

8 Citations (Scopus)

Abstract

The effect of 30 MeV Li³⁺ ion and 8 MeV electron irradiation on the threshold voltage (V_TH), the voltage shift due to interface trapped charge (ΔV_Nit), the voltage shift due to oxide trapped charge (ΔF_Not), the density of interface trapped charge (ΔV_it), the density of oxide trapped charge (ΔN _ot) and the drain saturation current (I_{D Sat}) were studied as a function of fluence. Considerable increase in ΔN_it and ΔN_ot, and decrease in V_TH and I_{D Sat} were observed in both types of irradiation. The observed difference in the properties of Li³⁺ ion and electron irradiated MOSFETs are interpreted on the basis of energy loss process associated with the type of radiation. The study showed that the 30 MeV Li³⁺ ion irradiation produce more damage when compared to the 8 MeV electron irradiation because of the higher electronic energy loss value. High temperature annealing studies showed that trapped charge generated during ion and electron irradiation was annealed out at 500°C.

Original language	English
Pages (from-to)	323-331
Number of pages	9
Journal	Radiation Effects and Defects in Solids
Volume	157
Issue number	3
DOIs	https://doi.org/10.1080/10420150213002
Publication status	Published - 2002 Dec 1

Keywords

Electron irradiation
Ion irradiation
MOSFET
Trapped charge
Voltage shift

ASJC Scopus subject areas

Radiation
Nuclear and High Energy Physics
Materials Science(all)
Condensed Matter Physics

Access to Document

10.1080/10420150213002

Fingerprint Dive into the research topics of 'Effect of 30 MeV Li<sup>3+</sup> ion and 8MeV electron irradiation on N-channel MOSFETs'. Together they form a unique fingerprint.

Cite this

Gnana Prakash, A. P., Prashanth Ganesh, K. C., Nagesha, Y. N., Umakanth, D., Arora, S. K., & Siddappa, K. (2002). Effect of 30 MeV Li³⁺ ion and 8MeV electron irradiation on N-channel MOSFETs. Radiation Effects and Defects in Solids, 157(3), 323-331. https://doi.org/10.1080/10420150213002

@article{72c13839913b4d0e89b10efe3bb01f52,

title = "Effect of 30 MeV Li3+ ion and 8MeV electron irradiation on N-channel MOSFETs",

abstract = "The effect of 30 MeV Li3+ ion and 8 MeV electron irradiation on the threshold voltage (VTH), the voltage shift due to interface trapped charge (ΔVNit), the voltage shift due to oxide trapped charge (ΔFNot), the density of interface trapped charge (ΔVit), the density of oxide trapped charge (ΔN ot) and the drain saturation current (ID Sat) were studied as a function of fluence. Considerable increase in ΔNit and ΔNot, and decrease in VTH and ID Sat were observed in both types of irradiation. The observed difference in the properties of Li3+ ion and electron irradiated MOSFETs are interpreted on the basis of energy loss process associated with the type of radiation. The study showed that the 30 MeV Li3+ ion irradiation produce more damage when compared to the 8 MeV electron irradiation because of the higher electronic energy loss value. High temperature annealing studies showed that trapped charge generated during ion and electron irradiation was annealed out at 500°C.",

keywords = "Electron irradiation, Ion irradiation, MOSFET, Trapped charge, Voltage shift",

author = "{Gnana Prakash}, {A. P.} and {Prashanth Ganesh}, {K. C.} and Nagesha, {Y. N.} and D. Umakanth and Arora, {S. K.} and K. Siddappa",

year = "2002",

month = dec,

day = "1",

doi = "10.1080/10420150213002",

language = "English",

volume = "157",

pages = "323--331",

journal = "Radiation Effects and Defects in Solids",

issn = "1042-0150",

publisher = "Taylor and Francis Ltd.",

number = "3",

}

TY - JOUR

T1 - Effect of 30 MeV Li3+ ion and 8MeV electron irradiation on N-channel MOSFETs

AU - Gnana Prakash, A. P.

AU - Prashanth Ganesh, K. C.

AU - Nagesha, Y. N.

AU - Umakanth, D.

AU - Arora, S. K.

AU - Siddappa, K.

PY - 2002/12/1

Y1 - 2002/12/1

N2 - The effect of 30 MeV Li3+ ion and 8 MeV electron irradiation on the threshold voltage (VTH), the voltage shift due to interface trapped charge (ΔVNit), the voltage shift due to oxide trapped charge (ΔFNot), the density of interface trapped charge (ΔVit), the density of oxide trapped charge (ΔN ot) and the drain saturation current (ID Sat) were studied as a function of fluence. Considerable increase in ΔNit and ΔNot, and decrease in VTH and ID Sat were observed in both types of irradiation. The observed difference in the properties of Li3+ ion and electron irradiated MOSFETs are interpreted on the basis of energy loss process associated with the type of radiation. The study showed that the 30 MeV Li3+ ion irradiation produce more damage when compared to the 8 MeV electron irradiation because of the higher electronic energy loss value. High temperature annealing studies showed that trapped charge generated during ion and electron irradiation was annealed out at 500°C.

AB - The effect of 30 MeV Li3+ ion and 8 MeV electron irradiation on the threshold voltage (VTH), the voltage shift due to interface trapped charge (ΔVNit), the voltage shift due to oxide trapped charge (ΔFNot), the density of interface trapped charge (ΔVit), the density of oxide trapped charge (ΔN ot) and the drain saturation current (ID Sat) were studied as a function of fluence. Considerable increase in ΔNit and ΔNot, and decrease in VTH and ID Sat were observed in both types of irradiation. The observed difference in the properties of Li3+ ion and electron irradiated MOSFETs are interpreted on the basis of energy loss process associated with the type of radiation. The study showed that the 30 MeV Li3+ ion irradiation produce more damage when compared to the 8 MeV electron irradiation because of the higher electronic energy loss value. High temperature annealing studies showed that trapped charge generated during ion and electron irradiation was annealed out at 500°C.

KW - Electron irradiation

KW - Ion irradiation

KW - MOSFET

KW - Trapped charge

KW - Voltage shift

UR - http://www.scopus.com/inward/record.url?scp=0346857226&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0346857226&partnerID=8YFLogxK

U2 - 10.1080/10420150213002

DO - 10.1080/10420150213002

M3 - Article

AN - SCOPUS:0346857226

VL - 157

SP - 323

EP - 331

JO - Radiation Effects and Defects in Solids

JF - Radiation Effects and Defects in Solids

SN - 1042-0150

IS - 3

ER -