Effect of 30 MeV Li3+ ion and 8MeV electron irradiation on N-channel MOSFETs

A. P. Gnana Prakash, K. C. Prashanth Ganesh, Y. N. Nagesha, D. Umakanth, S. K. Arora, K. Siddappa

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

The effect of 30 MeV Li3+ ion and 8 MeV electron irradiation on the threshold voltage (VTH), the voltage shift due to interface trapped charge (ΔVNit), the voltage shift due to oxide trapped charge (ΔFNot), the density of interface trapped charge (ΔVit), the density of oxide trapped charge (ΔN ot) and the drain saturation current (ID Sat) were studied as a function of fluence. Considerable increase in ΔNit and ΔNot, and decrease in VTH and ID Sat were observed in both types of irradiation. The observed difference in the properties of Li3+ ion and electron irradiated MOSFETs are interpreted on the basis of energy loss process associated with the type of radiation. The study showed that the 30 MeV Li3+ ion irradiation produce more damage when compared to the 8 MeV electron irradiation because of the higher electronic energy loss value. High temperature annealing studies showed that trapped charge generated during ion and electron irradiation was annealed out at 500°C.

Original languageEnglish
Pages (from-to)323-331
Number of pages9
JournalRadiation Effects and Defects in Solids
Volume157
Issue number3
DOIs
Publication statusPublished - 2002 Dec 1

Keywords

  • Electron irradiation
  • Ion irradiation
  • MOSFET
  • Trapped charge
  • Voltage shift

ASJC Scopus subject areas

  • Radiation
  • Nuclear and High Energy Physics
  • Materials Science(all)
  • Condensed Matter Physics

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  • Cite this

    Gnana Prakash, A. P., Prashanth Ganesh, K. C., Nagesha, Y. N., Umakanth, D., Arora, S. K., & Siddappa, K. (2002). Effect of 30 MeV Li3+ ion and 8MeV electron irradiation on N-channel MOSFETs. Radiation Effects and Defects in Solids, 157(3), 323-331. https://doi.org/10.1080/10420150213002