TY - JOUR
T1 - Effect of 30 MeV Li3+ ion and 8MeV electron irradiation on N-channel MOSFETs
AU - Gnana Prakash, A. P.
AU - Prashanth Ganesh, K. C.
AU - Nagesha, Y. N.
AU - Umakanth, D.
AU - Arora, S. K.
AU - Siddappa, K.
N1 - Funding Information:
The authors are grateful to the accelerator group of the Nuclear Science Center, New Delhi, India for their technical support. The authors acknowledge with thanks Shri. N. Subrama-nyam, M. R. Satyanarayana Rao and Smt. D. K. Nirmala, Bharath Electronics (BEL), Bangalore, India for providing devices and vital information. This work has been carried out under the financial assistance from BRNS, Department of Atomic Energy (DAE), Government of India.
PY - 2002
Y1 - 2002
N2 - The effect of 30 MeV Li3+ ion and 8 MeV electron irradiation on the threshold voltage (VTH), the voltage shift due to interface trapped charge (ΔVNit), the voltage shift due to oxide trapped charge (ΔFNot), the density of interface trapped charge (ΔVit), the density of oxide trapped charge (ΔN ot) and the drain saturation current (ID Sat) were studied as a function of fluence. Considerable increase in ΔNit and ΔNot, and decrease in VTH and ID Sat were observed in both types of irradiation. The observed difference in the properties of Li3+ ion and electron irradiated MOSFETs are interpreted on the basis of energy loss process associated with the type of radiation. The study showed that the 30 MeV Li3+ ion irradiation produce more damage when compared to the 8 MeV electron irradiation because of the higher electronic energy loss value. High temperature annealing studies showed that trapped charge generated during ion and electron irradiation was annealed out at 500°C.
AB - The effect of 30 MeV Li3+ ion and 8 MeV electron irradiation on the threshold voltage (VTH), the voltage shift due to interface trapped charge (ΔVNit), the voltage shift due to oxide trapped charge (ΔFNot), the density of interface trapped charge (ΔVit), the density of oxide trapped charge (ΔN ot) and the drain saturation current (ID Sat) were studied as a function of fluence. Considerable increase in ΔNit and ΔNot, and decrease in VTH and ID Sat were observed in both types of irradiation. The observed difference in the properties of Li3+ ion and electron irradiated MOSFETs are interpreted on the basis of energy loss process associated with the type of radiation. The study showed that the 30 MeV Li3+ ion irradiation produce more damage when compared to the 8 MeV electron irradiation because of the higher electronic energy loss value. High temperature annealing studies showed that trapped charge generated during ion and electron irradiation was annealed out at 500°C.
KW - Electron irradiation
KW - Ion irradiation
KW - MOSFET
KW - Trapped charge
KW - Voltage shift
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U2 - 10.1080/10420150213002
DO - 10.1080/10420150213002
M3 - Article
AN - SCOPUS:0346857226
VL - 157
SP - 323
EP - 331
JO - Radiation Effects and Defects in Solids
JF - Radiation Effects and Defects in Solids
SN - 1042-0150
IS - 3
ER -